Pipeline-controlled semiconductor memory device with reduced power consumption and memory access time

ABSTRACT

A semiconductor device includes a memory cell array including a plurality of memory array basic units. A first bus for transfer of address/control signals, includes a first buffer circuit operating as a pipeline register. A second bus for bidirectional transfer of write/read data, includes a second buffer circuit operating as a pipeline register. A first control circuit sequentially sends the address/control signals on the first bus, and a second control circuit sequentially sends/receives write/read data on the second bus.

REFERENCE TO RELATED APPLICATION

This application is based upon and claims the benefit of the priority ofJapanese patent application No. 2011-105119, filed on May 10, 2011, thedisclosure of which is incorporated herein in its entirety by referencethereto.

TECHNICAL FIELD

This invention relates to a semiconductor device and, more particularly,to a semiconductor device including a memory cell array.

BACKGROUND

The recent tendency in semiconductor memories, such as DRAMs (DynamicRandom Access Memories), is towards more sophisticated function, higheroperating speed and larger capacity. In addition, a memory input/outputdata band width is also appreciably improved with the introduction of anarchitecture such as DDR (Double Data Rate)/DDR2/DDR3.

To improve memory input/output data band width, the amount of data thatmay be handled needs to be increased by improving memory READ or WRITEcycle time (tRC: ROW CYCLE TIME) or the number of simultaneousoperations (parallel operations) in a memory or increasing the number ofbanks in the memory cell array. The number of simultaneous operations,or the number of parallel operations, needs to be increased byincreasing the number of parallel lines.

In a well-known manner, the consumed power P may be approximated by thefollowing equation (1):n×c×f×V ²  (1)

In the equation (1), n is the number of elements, c is capacitance(output load capacitance charged/discharged by the elements), f is theoperating frequency, and V is the operating voltage. The derivation ofthe equation (1) will now be explained briefly. The power P is anaverage of the power consumed when an element charges/discharges theoutput load capacitance (dynamic dissipation). With the operatingfrequency (in actuality, the toggle frequency) f and with the outputload capacitance CL, the power may be expressed as the sum of the powerwhen an output of an element Vout rises from Low (0V) to High (VDD) andthe power when the output Vout falls from High (VDD) to Low (0V), andmay be approximated by

$\begin{matrix}\begin{matrix}{{Pd} = {{\frac{C_{L}}{tp}{\int_{0}^{VDD}{V_{out}{\mathbb{d}V_{out}}}}} +}} \\{\frac{C_{L}}{tp}{\int_{VDD}^{0}{( {V_{DD} - V_{out}} ){\mathbb{d}( {V_{DD} - V_{out}} )}}}} \\{= {\frac{C_{L}V_{DD}^{2}}{2\;{tp}} + \frac{C_{L}V_{DD}^{2}}{2\;{tp}}}} \\{= \frac{C_{L}V_{DD}^{2}}{tp}} \\{= {C_{L}V_{DD}^{2}f}}\end{matrix} & (2)\end{matrix}$where tp=1/f.

For n elements (n output lines), the equation (2) is multiplied by n andthe capacitance load CL of each output is given a common value c to givethe equation (1).

For example, if the data band width (transfer efficiency) is doubled byimproving the operating frequency f, the power is also increased. In amemory cell array, it is desired not only to increase the data amountbut also to reduce power consumption.

In Patent Document 1, there is disclosed a memory system that supportsmultiple memory access latency time. FIG. 1 herein shows theconfiguration of the system disclosed in Patent Document 1 (FIG. 1 iscited from FIG. 2A of Patent Document 1). The configuration of FIG. 1controls the access to memory devices in the memory system. The memorydevices are classed into a group near to a memory controller 202(latency time group 1) and another group remote from it (latency timegroup 2). The global access latency is reduced by assigning datafrequently accessed data to the group 1 and assigning other data to thegroup 2.

FIG. 2 illustrates a memory configuration in the case that theconfiguration of FIG. 1 has been replaced by a state-of-the-art DRAM(FIG. 2 illustrates a reference case (prototype example) prepared by thepresent inventor).

Referring to FIG. 2, the memory (DRAM core) includes:

a memory cell array 1 which has a multiple-bank configuration and iscomposed of an array of a plurality of memory cells,

a row decoder (X DEC) 2 that decodes a row address to activate aselected word line,

a column decoder (Y DEC) 3 that decodes a column address to turn on aY-switch of a selected column (bit line),

a sense amplifier/Y switch 4 that amplifies the potential on the bitline,

a data amplifier/write amplifier (WRITE AMP) 5 that amplifies read dataamplified by the sense amplifier of the selected column to output the soamplified data to RWBS (read write bus) to drive write data from theRWBS (read/write bus),

a control circuit (Address Command Timing Controller) 6 that controlsthe address, command and the timing,

a data control circuit (Data, I/O and Data Mask) 7 that controls thedata input/output function to or from a memory cell between a dataterminal (not shown) connected to an internal data bus 9 and the RWBS(read write bus) and that manages write mask control to the memory cellby a data mask signal from a data mask terminal (not shown),an internal data bus 9 that performs an input (clock, address or commandinput) 8 to the DRAM core, and inputs/outputs data to or from the DRAMcore.

FIG. 3 illustrates a portion of a prototype arrangement (layout) of FIG.2. FIG. 3 is also prepared by the present inventor to explain FIG. 2.Referring to FIG. 3, an area 10 in the memory cell array 1 represents anactive area including memory cells being accessed. The reference numeral11 denotes a memory array or a memory macro (a circuit block used ine.g., a system LSI) that constitutes a memory array basic unit. A memoryarray basic unit may be abbreviated to a basic unit. The control circuit(address command timing controller) 6 manages control via anaddress/command bus (ADDRESS/COM BUS) connecting in common to basicunits 11 of two memory cell arrays 11 to select the active area 10 to beaccessed. The active area 10 is selected by an X decoder (XDEC) 2 thatdecodes an X-address (row address) of the address signal to activate theselected word line and by a column decoder (YDEC) 3 that decodes acolumn address to turn on a Y-switch of the selected column. Data (WRITEdata and READ data) are inputted/outputted at the data control circuit((data I/O data mask) 7 and transferred via a read/write bus (RWBS)connecting common to the multiple memory array basic units 11. In FIG.3, there are 36 data terminals (DQ terminals) connected to the internaldata bus 9 that compose a data input to the DRAM core only by way ofillustration. A plurality of items of bit data at the DQ terminals 9 areconverted by e.g., the data control circuit 7 into parallel data whichare then transferred in parallel to the read/write bus (RWBS). It isnoted that the plurality of items of bit data are seriallyinputted/outputted bits corresponding to a burst length (the number ofbit data that are able to be inputted/outputted in succession). Thisread/write bus (RWBS) is extended astride the multiple memory arraybasic units 11 and connected common to the data amplifier (DataAMP)/write amplifier (WRITE AMP) of each memory array basic unit 11.With the burst length equal to 4, the read/write bus (RWBS) includesfour data lines (I/O lines) per data terminal. Hence, with the 36 dataterminals, there are provided 36×4=144 data lines (IO) lines).

The IO configuration in the memory cell array is a hierarchicalconfiguration (local IO line/main IO line) or a non-hierarchicalconfiguration. In case the IO configuration is hierarchical, the main IOline connected to the data amplifier/write amplifier (WRITE Amp) isconnected via a switch circuit, not shown, to a plurality of local IOlines. These local IO lines are selected by the column decoder (Y DEC) 3and connected to a bit line of the column selected via the Y switch 4set in an on state.

In READ operation, data read from a memory cell connected to a word lineselected by the Y-decoder 2 (set at High potential) is amplified by thesense amplifier 4. The data is then transferred, via Y switch 4 of theselected column, set in an on state, to the local amplifier, and thenceto the data amplifier (Data Amp) 5, and output at the read write busRWBS. The data control circuit 7 converts the parallel bit data (datacomposed of a number of bits corresponding to the burst length) intoserial data which are then serially output at the data terminal to aninternal data bus 9 synchronized with a clock signal. Note that, in theDDR, the serial data are transferred in synchronization with rising andfalling edges of the clock signal.

In WRITE operation, the bit data, serially delivered at the dataterminal connected to the internal data bus 9, is converted intoparallel data by the data control circuit 7 so as to be transferred onthe RWBS. The bit data is amplified by the write amplifier (WRITE AMP) 5and transferred via main IO line, IO line and the selected local IO lineto the bit line of the selected column whose Y switch 4 has been turnedon.

The data is controlled by the address command timing controller 6 andread (READ) or written (WRITE) in the active area 10 in the selectedmemory cell array 1.

FIG. 4 which is prepared by the present inventor, illustrates a case 1in which in FIG. 3, a remote active area (active area 10-1) looking fromthe side of the address command timing controller 6 and the data IO 7,is selected, and a case 2 in which a near active area (active area 10-2)looking from the same side in FIG. 3 is selected.

FIG. 5, which is prepared by the present inventor, is a timing chartillustrating an access operation for each of cases 1 and 2 in FIG. 4.FIG. 5 schematically illustrates the relationship among a command (CMD),a clock signal (memory CLK), control delays (10-1 control delay and 10-2control delay), time of selection of the active areas 10-1, 10-2 (10-1selection time and 10-2 selection time) and output delays for the activeareas 10-1 and 10-2 (10-1 output delay and 10-2 output delay), and α, βand θ. It is noted that the control delays (10-1 control delay and 10-2control delay) are those for the active areas 10-1, 10-2 from thecommand input for the cases 1 and 2.

α is Row Cycle Time (tRC),

β is Row to Row Delay (tRRD),

γ is control delay or data delay (output delay), and

θ is READ Latency (latency).

γ includes time for the address command timing control circuit 6(address command timing controller) and the data control circuit 7 tocontrol the active area 10 of the memory cell array and delay timecaused in transferring a data signal via read write data bus RWBS to thememory array basic unit. The output delay corresponds to time for dataread from the active area 10 to be transferred via RWBS to the datacontrol circuit 7.

α is a cycle relating to the memory cell array operation of the activecell area 10.

β is a time that elapses since the input of a command (CMD) until theinput of the next command is enabled.

θ is the number of clock cycles since the READ command is inputted untildata is outputted at the data terminal DQ.

In an example of FIG. 5, it holds that

10-1 control delay>10-2 control delay, and

10-1 output delay>10-2 output delay.

The control delay as well as output delay γ in the active areas 10-1 and10-2 is one clock cycle at the maximum, while tRC(α) is 6 cycles, suchthat α>>γ, that is, α is appreciably longer than γ. On the other handα˜θ, that is, α is about equal to the latency.

Note that increasing the data band width and improving the memory cycleare synonymous with improving the latency.

In the example of FIG. 5, the ratio of γ to α (time ratio: γ/α) issmall. Hence, the delay of γ (control delay and output delay) as well asthe power consumed in γ (control delay and output delay) is small ascompared to the delay as well as the power in α.

However, if the number of parallel connections of IO in the memory cellarray, for example, the number of data lines for parallel transfer ofthe read write bus, is increased, the ratio of γ to α will increase dueto increase in time for parallel conversion of bit data seriallyinputted from the data terminal. This leads to increased power consumedin γ.

So far, the development in one aspect of the semiconductor memory hasbeen centered on the architecture for reducing tRC(α) and β. Note thatα=tRC (row cycle time) is an index for the cycle in which the memorycell array is actually in operation in accessing the memory cell. Thememory input/output operating frequency f is determined by the number ofdata that is read out/written in parallel in one tRC (number of memorycells accessed).

FIG. 6, which is prepared by the present inventor for clarifyingproblematic points, illustrates a prototype example 1 (reference case).In FIG. 6, the number of data terminals (data terminals connected to theinternal data bus 9) is 36, with the burst length BL being 4. Incorrespondence with BL=4, the read write bus (RWBS) is 4 bits. Incorrespondence with the 36 data terminals, there are 36×4=144 paralleldata lines (IO) lines), such that 144 data are written in or read fromthe active area. YDEC is a column decoder that decodes the columnaddress of the address signal. It is noted that, in FIG. 6, thoseelements that are the same as or equivalent to those shown in FIGS. 3and 4 are depicted by the same reference numerals. The YDEC may, ofcourse, be provided within the memory array basic unit, as shown inFIGS. 3 and 4.

[Patent Document 1] JP Patent Kohyo Publication No. JP-P2008-500668A

SUMMARY

The following is an analysis of related techniques.

It is true that, for a memory, the latency θ is crucial. However, it hascome to be required to improve tRC(α) to increase the number of dataaccesses (efficiency) in writing at a memory cell (efficiency) and toreduce power, that is, to reduce tRC(α) to increase the number of timesof data access and to realize low power.

FIGS. 7A and 7B illustrate WRITE and READ operations in thesemiconductor memory shown in FIG. 6. Note that FIGS. 7A and 7B areprepared by the present inventor to illustrate problematical points ofthe prototype example shown in FIG. 6. In FIGS. 7A and 7B, the burstlength=4, and BL0 to BL3 are 4-bit data read/written in succession forthe four columns (bit lines) (BL0, BL1, BL2 and BL3) by a single accesscommand in correspondence with the burst length=4.

In FIGS. 7A and 7B, CMD are a WRITE command and a READ command,respectively. Note that, in FIGS. 7A and 7B, a bank active command (ACT)or a precharge command (PRE), for example, is omitted. The CMD isspecified by the combination of control signals (chip select, writeenable, column address strobe or row address strobe). These controlsignals are supplied to a command decoder, not shown, for decoding.BL0-BL3 data BL0, BL1, BL2 and BL3, corresponding to four columns, aleading column address of which is specified, are written or read forthe specified row address in response to the WRITE or READ commandreceived.

In FIG. 7A, four bit serial write data BL0, BL1, BL2 and BL3 aredelivered from a single data terminal at a double data rate, that is, ata rate of two bit data for each clock cycle, in synchronization with afalling edge and a rising edge of the memory CLK. The input 4-bitparallel data BL0, BL1, BL2 and BL3, corresponding to the four columnsreceived, are serial-to-parallel converted to four-bit parallel data,which are then transferred in parallel on four data lines of the readwrite bus RWBS (control delay of γ). The data oncoming to the memoryarray basic unit 11 from the read write bus RWBS, bit data not specifiedfor data masking, is amplified by a write amplifier, here not shown(WRITE AMP 5 of FIG. 2). The amplified data are transferred, via main IOline (LIOT/B) and local IO line (LIOT/B), to a sense amplifier (SenseAmplifier of FIG. 2) of the bit line (BLT/B) of selected columns (fourcolumns) whose Y switches (Y Switches 4 of FIG. 2) are in an on state.The data are then written in selected cells (cells connecting to theword line set to High level) in the active area (selection time α).

The control delay for the active area 10-1 (FIG. 6) of the memory arraybasic unit 11 at a remote end from the data control circuit 7 (10-1control delay) is longer than the control delay for the active area 10-2(FIG. 6) of the memory array basic unit 11 at a near end from the datacontrol circuit 7 (10-2 control delay). This is shown in FIG. 7A in Case1 and Case 2. It is noted that BL0 to BL3, shown below the 10-1 and 10-2control delay, are parallel 4-bit data serial-to-parallel converted from4-bit data serially delivered from the data terminal. On the other hand,BL0 to BL3, shown below the 10-1 and 10-2 selection time, are parallel4-bit data transferred to the selected column in the memory array basicunit 11, that is, write data to the four selected columns of the memorycell array (BL0 to BL3).

FIG. 7B is a timing chart illustrating the operation in reading out datafrom memory cells with a burst length 4. The control delay (10-1 controldelay) and the output delay (10-1 output delay) for the active area 10-1at a remote end from the data control circuit 7 is longer than thecontrol delay (10-2 control delay) and the output delay (10-2 outputdelay) for the active area 10-2 at a near end from the data controlcircuit 7. This is shown in FIG. 7B by Case 1 and Case 2. The 4-bit dataBL0 to BL3, read from the memory cells during the selection time of FIG.7B (selection time of the active area 10-1 or 10-2) are transferred viathe Y-switch (Y-Switch 4 of FIG. 2) from the local IO line or main IOline to the read write bus (RWBS). The 4-bit data BL0 to BL3 arrive atthe data control circuit 7 after an output delay (10-1 output delay or10-2 output delay). The 4-bit data BL0 to BL3 are serially at a doubledata rate in two cycles. In the present Example, the cycle time from theinput of the CMD (READ) to the output of the first bit data BL2 is 4(latency θ).

In the WRITE and READ operations of FIGS. 7A and 7B, selection of theremote end memory cell (memory cell of the active area) determines acharacteristic. The period from a command (CMD) to the next command(CMD), that is, the CMD-to-CMD period β, is 3 cycles. The selection timeα of the active area of the memory cell array is 3 cycles.

In the example of FIG. 5, α>>γ. However, in a high-speed memory, theratio of γ to α or θ becomes larger.

That is, the data transfer delay, that is, the delay γ on the data busline (RWBS) or on the control signal line, in a memory access becomeslarger.

In particular, in a high-speed memory, in which importance is attachedto the cycle α (=tRC) to access a memory, the delay (γ) may appear to belonger than the delay of the memory operation itself, such as delay inselecting a word line, a bit line or a memory cell.

Hence, efficiently transferring data inputted from the data terminal tothe read write bus RWBS to access the memory cell for WRITE/READ is tobe made compatible with reduction of the power consumption.

FIG. 8 illustrates the prototype example 2 (reference case). FIG. 8 isalso prepared by the present inventor to explain problematical points ofthe prototype example 1. In FIG. 8, four basic units (memory array basicunits) 11 are provided. There are provided 36 data terminals, that is,IO terminals connecting to the internal data bus 9, with the burstlength BL being 8. The read write bus (RWBS) includes 8-bit data lines(IO lines) in correspondence with a single data terminal, such that theread write bus (RWBS) includes 8×36=288 (288 bit-parallel) data lines.

Reference numerals 10-1 and 10-2 are active areas in the memory arraybasic unit 11. YDEC is a column decoder that decodes a column address.In FIG. 8, the elements which are the same as or equivalent to thoseshown in FIG. 6 are indicated by the same reference numerals. The YDECmay, of course, be provided within the memory array basic unit 11, asshown in FIGS. 3 and 4. The active area 10-1 is remoter from, and theactive area 10-2 is nearer to, the control circuit (address command andtiming controller) 6 and to the data control circuit (data I/O and datamask) 7.

FIGS. 9 and 10 are timing charts for illustrating respectively the WRITEand READ operations in the configuration of FIG. 8. Referring to FIG. 9,in continuous WRITE in which WRITE commands are inputted in successionwithout intermission, 8-bit data BL0 to BL7, corresponding to 8 columns,are serially supplied to the data terminals in synchronization withrising and falling edges of two clock cycles from the first WRITEcommand (CMD). After control delay of γ, 8-bit data BL0 to BL7 aretransferred as parallel data to the write amplifier (WRITE AMP of FIG.2) of the memory array basic unit 11 via the read write bus RWBS. Duringthe selection time, following the control delay, the 8-bit data BL0 toBL7 are written in memory cells connecting to the word line selected andto bit lines of the eight columns selected.

In the example of FIG. 9, the selection time α is 3 clock cycles.Following the 8-bit data serially inputted in correspondence with thelast WRITE command (CMD), next 8-bit data corresponding to the nextWRITE command (CMD) are serially inputted from the data terminals. Thecontrol delay for the remote end active area 10-1 is longer than that ofthe near end active area 10-2. It is noted that a left pipeline 1(Pipeline1) in FIG. 9 indicates that the processing of the control delayand subsequent selection time is carried out in a single stage pipeline.

Referring to FIG. 10, during the continuous READ time in which the READcommands are entered in succession, without intermission, 8-bit data areoutput from the data terminals, in synchronization with the rising andfalling edges of the clock, after the latency θ from the input of theREAD command.

The pipeline 1 (Pipeline1), shown left in FIG. 10, indicates controldelay and selection time, and the pipeline 2 (Pipeline2), also shownleft in FIG. 10, indicates output delay and outputting of serial bitdata. The control delay and the output delay for the remote-end activearea 10-1, shown by Case 1, are longer than the control delay and theoutput delay for the near-end active area 10-2, shown by Case 2.

In Patent Document 1, described above, attention is focused on the delaytime of the latency path to read and write data efficiently, such as toreduce an average latency.

However, if simply the average latency is reduced, the cycle of thememory access itself cannot become shorter, while the power may not bereduced sufficiently.

The above mentioned prototype examples do not provide a semiconductordevice having a memory cell array which can reduce power and reducememory access time.

A device according to one aspect of the embodiments may be substantiallysummarized as follows, but not limited thereto.

There is provided a device including: a memory cell array including aplurality of memory cells for read/write, the memory cell array beingmade up of a plurality of memory array basic units;

a first bus provided common to the plurality of memory array basicunits, the first bus allowing transfer of address/control signalsthereon, the first bus including at least one first buffer circuit thatoperates as a pipeline register;

a second bus provided common to the plurality of memory array basicunits, the second bus allowing bidirectional transfer of data thereon,the second bus including at least one second buffer circuit thatoperates as a pipeline register;

a first control circuit that sequentially sends the address/controlsignals on the first bus from one end thereof, in a sequence of from theaddress/control signals destined for the memory array basic unit locatedat a remote end side with respect to the one end of the first bus, tothe address/control signals destined for the memory array basic unit ata near end side with respect to the one end of the first bus; and

a second control circuit that in a write access, sends write data on thesecond bus from one end thereof, sequentially in a sequence of fromwrite data destined for the memory array basic unit located at a remoteend side with respect to the one end of the second bus to write datadestined for the memory array basic unit at a near end side with respectto the one end of the second bus,

the write data transferred from the second bus to each of the memoryarray basic units being written in each of the memory array basic units,

in a read access, read data from a plurality of the memory array basicunits being transferred on the second bus to get to the second controlcircuit, in a sequence of from the read data from the memory array basicunit located at the near end side with respect to the one end of thesecond bus to the read data from the memory array basic unit located atthe remote end side with respect to the one end of the second bus, thesecond control circuit outputting the arrived read data.

The semiconductor device according to the one aspect is able to maintaindata efficiency and to allow power consumption to be reduced.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a diagram illustrating a configuration of Patent Document 1.

FIG. 2 is a diagram illustrating the configuration of a state-of-the-artmemory.

FIG. 3 is a diagram illustrating a prototype example.

FIG. 4 is a diagram illustrating another prototype example.

FIG. 5 is a timing chart illustrating operations of the prototypeexample of FIG. 4.

FIG. 6 is a diagram illustrating a prototype example 1 (reference case).

FIGS. 7A and 7B are timing charts for explaining the WRITE and READoperation of FIG. 6.

FIG. 8 is a diagram illustrating a prototype example 2 (reference case).

FIG. 9 is a timing chart illustrating the WRITE operation of FIG. 8.

FIG. 10 is a timing chart illustrating the READ operation of FIG. 8.

FIG. 11 is a diagram illustrating an exemplary embodiment 1.

FIG. 12 is a timing chart illustrating the WRITE operation of theexemplary embodiment 1.

FIG. 13 is a timing chart illustrating the READ operation of theexemplary embodiment 1.

FIG. 14 is a timing chart illustrating the pipeline of the WRITEoperation of the exemplary embodiment 1.

FIG. 15 is a timing chart illustrating the pipeline of the READoperation of the exemplary embodiment 1.

FIG. 16 is a diagram illustrating an exemplary embodiment 2.

FIG. 17 is a timing chart illustrating the WRITE operation of theexemplary embodiment 2.

FIG. 18 is a timing chart illustrating the READ operation of theexemplary embodiment 2.

FIG. 19 is a timing chart illustrating the pipeline of the WRITEoperation of the exemplary embodiment 2.

FIG. 20 is a timing chart illustrating the pipeline of the continuousWRITE operations of the exemplary embodiment 2.

FIG. 21 is a timing chart illustrating the pipeline of the READoperation of the exemplary embodiment 2.

FIG. 22 is a timing chart illustrating the pipeline of the WRITE to READoperation of the exemplary embodiment 2.

FIG. 23 is a timing chart illustrating the pipeline of the READ to WRITEoperation of the exemplary embodiment 2.

FIG. 24 is a diagram illustrating an exemplary embodiment 3.

FIGS. 25A to 25D are timing diagrams illustrating burst switching in theexemplary embodiment 3.

FIG. 26 is a diagram illustrating an exemplary embodiment 4.

FIGS. 27A to 27D are timing diagrams illustrating burst switchinginhibit rule in the exemplary embodiment 4.

FIGS. 28A to 28C are timing diagrams illustrating the design statementsfor the CMD to CMD period β in a common IO line (CIO line) configurationin the exemplary embodiment 4.

FIG. 29 is a diagram illustrating an exemplary embodiment 5.

FIGS. 30A to 30C are diagrams illustrating the exemplary embodiment 5.

FIGS. 31A, 31B are diagrams illustrating example configurations of abuffer.

FIG. 32 is a diagram illustrating address allocation in an exemplaryembodiment 6.

FIG. 33 is a diagram illustrating a first example address allocation inthe exemplary embodiment 6.

FIG. 34 is a diagram illustrating a second example address allocation inthe exemplary embodiment 6n.

FIG. 35 is a diagram illustrating an example configuration of a bufferand a memory array basic unit in each exemplary embodiment.

PREFERRED MODES

The following describes embodiments.

The principal features of the embodiments may substantially be outlinedas set out below. It should be noted that the following is not to beconstrued as restricting the invention.

(1) Pipeline registers are introduced on an address/command bus from anaddress command control circuit and an IO line (read write bus) from adata control circuit to divide a memory cell array.

(2) The pipeline register being valid/invalid is made to be switcheddepending on the operation specifications of a memory cell array toenable a basic unit of the memory cell array to be changed.

(3) An access latency and an interval β (tRRD) between command input isto be varied for each of basic units, into which the memory cell arrayis divided.

(4) For IO lines (RWBS) and control lines (address/command bus), aplurality of active regions in a plurality of basic units can beselected in parallel to perform data inputting/outputting.

(5) The number selections in selecting active regions in the memory cellarray in parallel for the IO and control lines is made variable incorrespondence with the operation design statements. The addressallocation is also made variable.

In a semiconductor device according to one embodiment, there is provideda memory cell array that includes a plurality of memory cells forread/write and is made up of a plurality of basic units (11). A firstbus (address/command bus) and a second bus (RWBS) are provided to theplurality of basic units (11) in common. The first bus and the secondbus allow transfer of an address signal/a control signal thereon. Thefirst bus includes at least one first buffer circuit (13A) that operatesas a pipeline register and the second bus includes at least one secondbuffer circuit (13B) that operates as a pipeline register. There areprovided a first control circuit (6) and a second control circuit (7).The first control circuit (6) sequentially sends out address/controlsignals, from one end of the first bus (address/command bus), in asequence of from the address/control signal destined for a basic unitlocated at a remote end side with respect to the one end to theaddress/control signal destined for a basic unit at a near end side withrespect to the one end. The second control circuit (7) sequentiallysends out data signals, at write time, from one end of the second bus(RWBS), in the sequence of from the data signal destined for the remoteend side basic unit with respect to the one end to the data signaldestined for the near end side basic unit with respect to the one busend. Write data transferred from the second bus (RWBS) to each of thebasic units are written in memory cells in each of the basic unitsselected. Read data from the basic units at read time get to the secondcontrol circuit via the second bus (RWBS) in the order from the datacoming from the near end side basic unit to the data from the remote endside basic unit. The second control circuit (7) outputs the arrived readdata. In one of the embodiments, at least one first buffer circuit (13A)may be provided on the first bus (address/command bus) between the basicunit located at the near end and the basic unit located at the remoteend from the first control circuit (6). In addition, at least one secondbuffer circuit (13B) may be provided on the second bus (RWBS) betweenthe basic unit located at the remote end and the basic unit located atthe near end from the second control circuit (7). The first buffercircuit (13A) may be provided on the first bus (RWBS) between theneighboring basic units, and the second buffer circuit (13B) may beprovided on the second bus (RWBS) between the neighboring basic units.

In one embodiment, the memory cell array may include first to Nth basicunits (memory array basic units) (11), where N is a pre-set positiveinteger. The first bus (address/command bus) may include a (N−1)-numberof the first buffer circuits (13A), each of which is locatedrespectively between each of (N−1) pairs of neighboring basic units,where N is a positive integer not less than 2. The second bus (RWBS) mayinclude an M-number of parallel data lines per data terminal. The datalines serially input/output M×N bit data corresponding to a burst lengthM×N, where M is a pre-set positive integer not less than 1. The secondbus (RWBS) includes a (N−1) number of the second buffer circuits (13B),each of which is located respectively between each of (N−1) pairs ofneighboring basic units. The first control circuit (6) sequentiallysends out to the first bus (address/command bus), on a per cycle basis,the address/control signals in the sequence of from the address/controlsignal destined for the remotest one of the first to Nth basic units tothe address/control signal destined for the nearest one. At write time,the second control circuit (7) sends out, in parallel, the M×N bit data,serially inputted from the single data terminal. At data write time, thesecond control circuit (7) sequentially sends out data in parallel inthe sequence of from the data destined for the remotest one of the firstto Nth basic units to the data destined for the nearest one, M bits eachtime, to the M-number of the data lines of the second data line, on aper cycle basis. The M-bit data, transferred to each of the first to Nthbasic units (11) from the second bus, are written in each of theM-number of the columns of the first to the Nth basic units. At readtime, the M-number of bits of the bit data read from the selected memorycells connected to the M-number of columns of the first to the Nth basicunits are transferred on the second bus (RWBS) to sequentially get tothe second control circuit in the order of from the M-number of bits ofdata read from the nearest basic unit to the M-number of bits of dataread from the remotest basic unit. The second control circuit (8)serially outputs the M×N numbers of data from the data terminal.

In another embodiment, the pipeline registers may be decimated toprovide a configuration optimized for different plural values of burstlengths. The first bus (address/command bus) may include the firstbuffer circuit (13A) between each of neighboring pair basic units out ofa plurality of pair basic units, and the second bus (RWBS) may includethe second buffer circuit (13B) between each of neighboring pair basicunits out of a plurality of pair basic units. At least one pair of afirst buffer circuit and a second buffer circuit out of a pluralitypairs of the first buffer circuits and second buffer circuits mayoperate as a pipeline register, with the pipelining functions of theremaining first and second buffer circuits being invalidated to enablecoping with a plurality of different burst lengths.

In one embodiment, the memory cell array may include first to Nth basicunits, where N=2^K, K being an integer not less than 2 and ^ being apower operator. The first bus (address/command bus) may include a (N−1)number of first buffer circuits (13A) located respectively between (N−1)pairs of neighboring basic units, and the second bus (RWBS) may include,per data terminal, an M-number of data lines, M being a pre-set positiveinteger not less than 2, that serially input/output a K-number of bitdata corresponding to the burst length. The second bus may include a(N−1) number of second buffer circuits (13B) between the (N−1) pairs ofneighboring basic units. In case the burst length is M×N, the (N−1)number of the first buffer circuits and the (N−1) number of the secondbuffer circuits may operate a pipeline register. In case the burstlength is M×(N/(2^L)), where L is a pre-set integer not less than 1 andnot more than K and ^ denotes a power operator, a neighboring 2^(K−1)number of basic units may be made a set. The first and second buffercircuits between the neighboring sets may operate as pipeline registers,with the remaining first and second buffer circuits having pipeliningfunctions thereof invalidated.

In one embodiment, there may be provided a plurality of third buffercircuits (13C) provided in association with a plurality of the basicunits (11). The third buffer circuit (13C) receives the address/controlsignal transferred on the first bus and transmit the signal received tothe corresponding basic unit.

In one embodiment, a first period corresponding to a control delay,composed of a transfer cycle of an address/command to the first bus(address/command bus) in connection with a write access and a readaccess and a transfer cycle of write data to the second bus (RWBS) inconnection with the write access, may be composed of a plurality ofcycles in association with pipeline control, and longer than a secondperiod corresponding to selection time during which writing data in thememory cell selected or reading data from the selected memory cell ismade in the basic unit of the memory cell array.

In one embodiment, a third period corresponding to the output delay (γ)during which, in a read access, data read from the basic unit next tothe selection time is transferred on the second bus to get to the secondcontrol circuit, may be longer than the second period corresponding tothe selection time (α).

In one embodiment, the first period and the third period may both be aslong as the second period.

In one embodiment, the first and second periods or the first to thirdperiods corresponding to a plurality of commands sequentially made insuccession may be taken as a unit of pipeline control between commands.

In one embodiment, in the memory cell array, the basic unit may be asub-bank, and there is provided a bank (15) composed of a plurality ofthe sub-banks, which are accessed a plurality of numbers of times.

In one embodiment, the second bus may include a dedicated write bus(WBS: 16) that transfers write data from the second control circuit (7)to the plurality of basic units in the memory cell array, and adedicated read bus (RBS: 17) that transfers read data from the pluralityof basic units in the memory cell array to the second control circuit.The dedicated write bus (WBS: 16) may include at least one second buffercircuit (13B) and the dedicated read bus (RBS: 17) may include at leastone second buffer circuit (13B).

The following describes one of the basic principles of the embodiments.To help understand the basic principles of the embodiments, comparisonis to be made from time to time to the above mentioned prototypeexamples (prototype examples) and Patent Document 1.

As described with reference to the prototype examples (prototypeexamples), due to division of the memory cell array into a plurality ofbasic units (memory array basic units) and to the increasing storagecapacity, the number of memory cell arrays controlled by the controlcircuit (address command timing controller) or the data control circuit(data I/O, data mask) is increasing. Moreover, the length of the controlsignal interconnections or that of read write buses for data transfer isalso increasing. Thus, granting that attempts are being made to reducethe period of the selection time tRC (α), such is not the case with theperiod of control delay-output delay (γ). Hence, as the period of a isbeing reduced in correspondence with the increasing capacity andimprovement in performance, the proportion of the period γ is becominglarger.

In short, the proportion of the transfer time of the data signal and thecontrol signal in a memory cell array (delay time γ on the read writebus or on the control signal line) becomes larger.

In particular, in a high-speed memory in which importance is attached toreduction of the memory-accessing ROW cycle time tRC (α) (higher speed),the above mentioned control delay and output delay (γ) may appear to belarger as compared to the delay (α) of the memory operation itself,which is regarded as being predominantly important in a high speedoperation, and in which such as selection of word or bit line orselection of a memory cell is performed.

Hence, to transmit data entered from outside efficiently on the readwrite bus (RWBS) for writing on the memory cell and to transmit readdata from the memory cell to the read write bus (RWBS) for efficientread, it is necessary that the high-speed signal transfer is madecompatible with reduced power consumption, as described with referenceto the prototype examples (prototype examples).

In the embodiments, attention is focused on power delay product (=P·Td).As set out above, the power P is determined by n×c×f×V², where n, c, fand V are the number of elements, capacity, operation frequency and theoperating power supply voltage, respectively. However, if the delay isdivisionally expressed in association with delay (γ) (=delay 1), such ascontrol delay and output delay, and delay (=delay 2), such as selectiontime (α), the power delay product P·Td may be represented by thefollowing equation (3):P×T _(d) =n ₁ ×c ₁ ×f ₁ ×V ₁ ² ×T _(d1) +n ₂ ×c ₂ ×f ₂ ×V ₂ ² ×T_(d2)  (3).

In the above equation (3), suffixes 1 denote the number of elements n,capacitance c, operating frequency f and the voltage of the operatingpower supply of the delay 1 (γ of the control delay and output delay),while suffixes 2 denote the number of elements n, capacitance c,operating frequency f and the voltage of the operating power supply V ofthe delay 2 (selection time α).

It is now considered if any of the items may be compromised for powerreduction by way of tradeoff. In light of the data efficiency of thesystem, the number of data outputted from the memory as well as thenumber of data supplied to the memory may not be reduced.

For the READ operation, the control delay and the output delay γ aredelay from the time of the input of a CMD (Read command) until anaddress and a command are given to the memory cell array basic unit 11(control delay), or delay from the time the control circuit thatreceives parallel data transferred from the memory array basic unit 11to the read write bus (RWBS) until the control circuit converts theparallel data into serial data to output the serial data at a dataterminal (output delay). The number of bit data read from thesemiconductor memory corresponds to the burst length and hence remainsunchanged.

Suppose that data output is started from the semiconductor memory and adata bus outside the semiconductor memory, such as bus 9 of FIG. 9, isfilled with data, that is, that consecutive clock cycles on the data busare filled with data such that there are no clock cycles devoid of data.In such case, the data efficiency, such as data transfer rate, isdetermined by the cycle α.

By allowing the system having an access, such as a READ access, to thesemiconductor memory, to ignore the period of the control delay andoutput delay γ which may influence the read latency apparent at theinitial access, it becomes possible to exploit the relation of tradeofffor power saving.

That is, in the embodiments, not only the data rate (number of data withrespect to the operation frequency) but also the item of powerconsumption is taken into consideration, and attention is focused on thepower delay product P·Td. The relation of tradeoff in the components ofthe delay 1 which are items of the power consumption and the delay timeTd by the control delay and output delay γ may be exploited to reducethe power consumption without compromising the data efficiency. Hence,the power may be reduced by decreasing f1 or P1 in the power itemn₁×c₁×f₁×V₁ ² in connection with the delay 1.

Additionally, the power and delay time Td are items contrary to eachother. It is thus necessary to avoid that the delay time Td becomesdoubled or even longer in case the power is halved.

On the other hand, the memory cell array is desirably so configured asto render constant or reduce the delay 2 that governs the number of datainputs/outputs of the memory cell (selection time α).

In the above mentioned prototype examples (prototype examples), forexample, in FIGS. 6 and 7, there are shown, as operation designparameters, the configuration of 36 data terminals (DQs) and the burstlength BL=4 (total number of data lines=144), and example timingoperations. In FIGS. 8 to 10, there are shown the configuration of 36data terminals (DQs) and the burst length BL=8 (total number of datalines=288), and example timing operations.

In the above mentioned related technique (prototype example) of FIG. 9,a delay time (γ) of one cycle is consumed to transfer a control signalfor WRITE, a data signal and a mask signal, while a delay time of twocycles is consumed as selection time for data write in the active area10-1 (Case 1) or in the active area 10-2 (Case 2). Three cycles areallotted to α by the control circuits 6 and 7 of FIG. 8. On the otherhand, the burst length=8 and four cycles are needed for data input.Hence, β is four cycles.

In the above mentioned related technique (prototype example) shown inFIG. 10, one cycle is allocated as the control delay γ, while one cycleis also allocated to the output delay γ for read data output. In thiscase, α, β and θ are all 4 cycles.

The above mentioned Patent Document 1 (JP Patent Kohyo Publication No.JP-P2008-500668A), focuses attention on the delay time on the latencypath to effect efficient data read and write, and provides a means toreduce the average latency. However, with the means to reduce theaverage latency, used alone, the cycle of the memory itself may not beshorter. On the other hand, with the means to reduce the averagelatency, used alone, the power may not be reduced sufficiently.

In the above mentioned prototype examples, there is no differencebetween the current consumption of the charging/discharging current onthe read write bus (RWBS), as an IO line for data transfer, whenaccessing the active area at the remote end of the memory cell array,and that when accessing the active area at the near end.

In case a row cycle time tRC (selection time α) of the memory cell arrayis reduced, the number of data that may be read from or written in thememory cell array is increased. However, the ratio of the delay γ of thecontrol signal/data signal to α becomes larger, as described above.

According to the one of the examples, the relationship of trade-offbetween α and γ is exploited, and pipeline control is introduced into γdelay control. That is, a bus (multiple bits) is divided by a pipelineregister(s) and signals on multiple sections resulting from division aretransferred on pipelines. In a two-stage pipeline configuration, the busis divided into a bus section preceding the pipeline register andanother bus section succeeding the pipeline register. In a first cycle,a first data group is sent to the preceding side bus and, in the nextfollowing second cycle, a second data group is sent out to the precedingside bus. The first data group is transferred to the succeeding side bussection which is an output of the pipeline register. In suchconfiguration, it is possible to alleviate time per pipeline stage(timing allowance) and to reduce the number of data lines for paralleltransmission. Hence, there may be provided a memory cell arrayconfiguration in which power consumption may be reduced withoutcompromising data efficiency. There may also be provided a memory cellarray configuration in which the number of data lines for read/write maybe increased. Specifically, according to the embodiments, transfer of acontrol signal and a data signal to the memory array (control delay γ)and transfer of the control signal and the data signal from the memoryarray (output delay γ) are formed by a plurality of cycles and arepipeline-controlled on a per cycle basis. That is, according to theembodiments, at least one pipeline register (buffer) is provided on eachof buses on which transfer the control signal and the data signal.Different data are allowed to co-exist in the same cycle on thepreceding side bus arranged on one side of the pipeline register and onthe succeeding side bus located on the other side of the pipelineregister. As a result, the control signal/data signal transferefficiency is not lowered and time per pipeline stage (timing allowance)may be alleviated.

Moreover, according to certain embodiments, in the pipelined bus for thecontrol signal and the data signal, a plurality of active areas of thememory array basic units, associated with the pipeline stages, may beselected to cope with increase in the number of data that may be readfrom or written on the memory cell array.

Conversely, in the prototype examples, the transfer of the controlsignal/data signal (control delay/output delay γ) is not pipelined. Inthe examples of FIGS. 5, 6, 9 and 10, γ is one cycle. That is, paralleldata are transferred in one clock cycle on the read write bus (RWBS).

It is assumed that the number of data that may be read out and writtenis the same as that of the prototype examples in which pipelining is notused and read/write data are transferred in parallel on the read writebus (RWBS). In this case, according to embodiments in which pipeliningcontrol is introduced, the number of paths on which to transfer data,that is, the number of data lines of the read write bus (RWBS), may bereduced to 1/(the number of pipeline stages). It is thus possible withthe embodiments to reduce power consumption without compromising thedata efficiency.

In addition, according to the embodiments, γ and a are fully separatedfrom each other to reduce α that governs the memory cycle and hence thecycle. Conversely, with the prototype examples, γ is comprehended in andnot separated from a, as shown in FIGS. 5, 7, 9 and 10.

In exemplary embodiments, a plurality of bit data, such as BL0 or BL2,are serially sequentially transferred on a single pipeline-controlleddata line on the read write bus (RWBS) which is an IO line used for datatransfer. The data BL0, sent out on the read write bus (RWBS) during theprevious cycle, arrives at the pipeline register and, during the nextcycle, transferred on the data line connected to an output of thepipeline register. On a data line of the preceding side data line of thepipeline register, BL2 as the next data of BL0 is transferred.Similarly, on another data line of the read write bus (RWBS), aplurality of bit data, such as BL1 and BL3, are serially transferred insynchronization with transfer of the data on the above mentioned singledata line, such as BL0 and BL2.

In WRITE operation, for example, write data are sequentiallypipeline-transferred, on a data line of the read write bus (RWBS), fromthe access area of the memory array basic unit remotest from the datacontrol circuit to the access area of the nearest memory array basicunit.

For example, data (e.g., BL0) destined for the access area of theremotest memory array basic unit is sent out at an earliest time fromthe data control circuit on a given single data line. On the other hand,data (e.g., BL2) destined for the access area of the nearest memoryarray basic unit is sent out last from the data control circuit on theabove mentioned data line. On another data line of the read write bus(RWBS), a plurality of bit data, such as BL1, BL3 are seriallytransferred in synchronization with transfer of the data (e.g., BL0,BL2) on the first-stated data time. During the selection time α, theremote end memory array basic unit writes the data (BL0, BL2) sent outin parallel from the pipeline register on the read write bus (RWBS) inan active area of interest. During the same time α, the near end memoryarray basic unit writes the data (BL1, BL3) sent out in parallel fromthe data control circuit on the read write bus (RWBS) in an active areaof interest.

In READ operation, on the other hand, read data from the access area ofthe nearest memory array basic unit are initially transferred on a dataline of the read write bus (RWBS) to arrive at the data control circuitat an earliest time. Read data from the access area of the remotestmemory array basic unit are transferred on the same data line to arriveat the data control circuit last.

By this configuration of the embodiments, the number of data lines ofthe read write bus (RWBS) may be reduced. For example, the number ofdata lines of the read write bus (RWBS) is 36 with the burst lengthBL=4, for the prototype example (reference case) of FIG. 6, where thenumber of data lines=36×4=144.

In contrast, in the embodiments, 36×2=72 data lines of the read writebus (RWBS) are needed for a configuration of 36 data terminals and theburst length BL=4. That is, in one embodiment the number of data linesmay be halved. By halving the number of the data lines, the powerconsumption involved in charging/discharging the data lines may besaved.

The same holds for paths on which to transfer the control signal to thememory array basic unit. That is, the paths may be provided with apipeline register to manage pipeline control.

It is disclosed in Patent Document 1 that the number of data that may behandled is to be increased by reducing the averaged latency, as set outabove. That is, the time β since the input of the command (CMD) untilthe next command (CMD) is reduced by reducing the averaged latency θ.

In contrast, according to certain embodiments, the relation of tradeoffbetween the latency θ (γ of delay 1) and the power is exploited such asto increase the number of data handled as well as to reduce the power asthe number of cycles of the selection time (α) is maintained or reduced.Since data are serially transferred on the read write bus (RWBS) thatinputs data to or outputs data from the memory array basic unit, thenumber of data lines (IO lines) of the read write bus (RWBS) may bereduced without reducing the number of data used for reading/writingdata in the memory cell array. If conversely the number of data lines isthe same as that of the pre-existing data lines, more data may bewritten or read. For example, if one of the embodiments is applied tothe configuration of FIG. 6 (×36×BL4=144), ×36×BL8=288 data may bewritten or read.

According to certain embodiments, the charging/discharging current,generated during transfer of data signals in case of accessing theremote end active area and near-end active area, may be reduced toreduce current consumption. This is made possible by the fact that, byproviding a pipeline register (buffer) between neighboring memory arraybasic units on an IO line (data line) on which to transfer data, thedata line is divided into a plurality of sections, such that it issufficient for a driver of the data control circuit to drive one thedivided section of the data line. The same holds for the control signal,such as an address/command signal. That is, the control line on which totransfer the control signal includes a pipeline register (buffer)between neighboring memory array basic units and is divided into aplurality of sections.

On the other hand, in the prototype example as shown in FIG. 6, a singledriver of the data control circuit drives a data line extending incommon from the near end to the remote end, resulting in increased loaddue to increased memory capacity. It is thus necessary to increase thedriver's current driving capability, resulting in increasedcharging/discharging current generated at the time of transfer of datasignals. The same problem persists for control signals, such asaddress/command signals.

In addition, according to certain embodiments, the driving voltage(amplitude) for the control signal or the data signal, transferred tothe memory cell array, is lowered to reduce power consumption. Thefollowing describes several exemplary embodiments with reference todrawings.

Exemplary Embodiment 1

FIG. 11 illustrates a configuration of an exemplary embodiment 1. InFIG. 11, the components which are the same as or equivalent to thoseshown in FIGS. 6 and 8 are denoted by the same reference numerals. Thefollowing description is centered on the points of difference from theprototype example of FIG. 6, while the description of the same orequivalent components is omitted.

A memory cell array is divided into a plurality of memory arrays basicunits 11 adapted to a pipeline configuration for synchronized operationwith a clock signal. Also, control signals, such as address, command ortiming signals, and data signals on the read write bus (RWBS), an IOline for data transfer, are divided, with a cycle (period) of a clocksignal CLK as reference. The control signals and data signals are thustransferred under pipeline control. Referring to FIG. 11, abidirectional buffer (address/command buffer) 13C, connected to anaddress/command bus, and an address/command sub-controller 12, areprovided in association with the memory array basic unit 11. Theaddress/command sub-controller 12 receives an output of theaddress/command buffer 13C to control the memory array basic units 11.There are further provided a buffer 13A and a buffer 13B. The buffer 13Ais provided on an address/command bus that transfers control signals,such as address/command, to operate as a pipeline register. The buffer13B is provided on the read write bus (RWBS) to operate as a pipelineregister. The address/command sub-controller 12 receives anaddress/command, latched by the address/command buffer 13C, to outputthe address/command received to the memory array basic unit 11. Anoutput of the buffer 13C, an input of which is connected to theaddress/command bus (ADDRESS/CMD BUS), is connected to theaddress/command sub-controller 12 to latch the address/command. Acontrol signal and an X-address (row address), output from theaddress/command sub-controller 12, are supplied to a row controller andan X-coder (CTRL, XDEC). The representation in which the CTRL, XDEC isshown in the same block as the address/command sub-controller 12, isadopted only for the simplification of the drawing.

A control circuit (address command timing controller) 6 receives anaddress, a command and an internal clock signal from an internalclock/address/command generator 8 to output an address/command/timingsignal to the address/command bus, in the same way as in FIGS. 6 and 8.Although each buffer 13 is a bidirectional buffer (see FIG. 31A), it mayalso be configured as a uni-directional buffer, such as buffer 13C, inwhich case it may be configured as shown in FIG. 31B.

Referring to FIG. 31A, the buffer 13B includes, in a bidirectional databuffer 13A, 3-state buffer circuits 131 and 132. The 3-state buffercircuit 131 allows the information of WRITE data of RWBS 130 to pass toRWBS 134 when the WRITE Enable+address space selection logic is in anactive state (when WRITE Enable is in active state and the address spaceselection logic is in active state). The 3-state buffer circuit 131 isin an off-state (in a Hi-Z (high impedance) state) when the WRITEEnable+address space selection logic is in a non-active state (whenWRITE Enable is in a non-active state and/or the address space selectionlogic is in a non-active state). The 3-state buffer circuit 132 allowsREAD data of RWBS 134 to pass to RWBS 130 when the READ Enable+addressspace selection logic is in an active state (when READ Enable is in anactive state and the address space selection logic is in an activestate). The 3-state buffer circuit 131 is in an off-state (in Hi-Zstate) when the READ Enable+address space selection logic is in anon-active state (when READ Enable is in a non-active state and/or theaddress space selection logic is in a non-active state). An output ofthe buffer circuit 131 is connected to a latch circuit 133. The latchcircuit 133 includes two inverters, with an input of one of the twoinverters receiving an output of the other inverter and an input of theother inverter receiving an output of the one inverter. WRITE Enable isactivated at WRITE time. When an address signal corresponds to thememory array basic unit connected to the RWBS side 134, the addressspace selection logic is activated. The WRITE Enable or the addressspace selection logic is activated in synchronization with, for example,a memory clock signal CLK that prescribes a cycle. READ Enable isactivated at read time and, when the address signal corresponds to thememory array basic unit connected to the RWBS side 134, the addressspace selection logic is activated. READ Enable or the address spaceselection logic is activated in synchronization with the memory clocksignal CLK.

In the exemplary embodiment 4 which will be described later withreference to FIG. 26, READ Enable+address space selection logic andWRITE Enable+address space selection logic may be fixed at thenon-active state to invalidate the pipeline control (pipeline register)function by the buffers 13A and 13B.

As shown in FIG. 31B, the buffer 13A includes a 3-state buffer circuit135 that outputs an address command of an ADDRESS/CMD BUS 137 when asignal of Enable+address space selection logic is active and that is inan off-state (in Hi-Z) state when the Enable+address space selectionlogic is in a non-active state. An output of the buffer circuit 135 isconnected to a latch circuit 136. The latch circuit 136 includes twoinverters, with an input of one of the two inverters receiving an outputof the other inverter and an input of the other inverter receiving anoutput of the one inverter. Enable is activated at an access time. Whenthe buffer circuit 135 corresponds to the memory array basic unit beingaccessed, ENABLE+address space selection logic, entered to the buffercircuit 135, is activated.

In FIG. 11, though not limited thereto, it is assumed that the number ofdata terminals (terminals connected to the internal data bus 9) is 36,and the burst length BL is 4. The read write bus (RWBS) has 36×2=72bidirectional data lines (IO lines). The read write bus (RWBS), extendedthrough the memory array basic unit 11 shown on a lower side of FIG. 11,is extended through the memory array basic unit 11 shown on an upperside of FIG. 11. 2-bit data BL0 and BL1, out of 4 column data BL0 toBL3, corresponding to the burst length=4, are output in parallel on twodata lines of the read write bus (RWBS) from the data control circuit 7,in advance of BL2 and BL3, and latched by the buffer 13B, so as to bethen transferred to the active area 10-1. At a timing of latching of the2-bit data BL0 and BL1 by the buffer 13B, the 2-bit data BL2 and BL3 areoutput from the data control circuit 7 on the two data lines on whichBL0 and BL1 were already transferred, and are transferred to the activearea 10-2. It is noted that the data BL2 and BL3, transferred later on2-bits on the read write bus (RWBS), are not latched on the buffer 13Band are not transferred to the active area 10-1 of the memory arraybasic unit 11 shown on the upper side of FIG. 11.

FIG. 35 illustrates an example configuration of the buffers 13A and 13Band 13C and the memory array basic unit 11. The memory array basic unit11 is similar in configuration to that shown in FIG. 4 and includes acolumn decoder 3. An address signal on the address/command bus isdelivered from the buffer 13C to the row decoder (XDEC), while theY-address is supplied to a column decoder (YDEC). A control signal onthe address/command bus (command signal) is delivered from the buffer13C to the control circuit (CTRL). The read write bus (RWBS) isconnected to a data amplifier/write amplifier 5, and is connected to asense amplifier of a column selected by the Y switch turned on by acolumn select signal from the YDEC. It is noted that the buffers 13A and13B, shown lowermost in FIG. 35, act as the control circuit 6 and as thedata control circuit 7 for the nearest memory array basic unit 11, whilethe buffers 13A and 13B shown uppermost in FIG. 35 act as bustermination circuits for the remotest memory array basic unit 11.

FIG. 12 illustrates the timing operation of the write operation of FIG.11. FIG. 13 illustrates the read operation of FIG. 11. In this figure,four bit data of BL0 to BL3 are serially delivered at a double data rateto the 36 data terminals (DQ) in correspondence with the burst length of4.

The address signal, control signal and the timing signal, controllingthe active areas 10-1 and 10-2, and the data (BL0/1 and BL2/3), writtenin the active areas 10-1 and 10-2, are transferred from the controlcircuits 6 and 7 within two cycles (within the period of γ). Data writeallocation is made at this time so that the data BL0 and BL1 will bewritten in the active area 10-1 and so that the data BL2 and BL3 will bewritten in the active area 10-2.

The ROW addresses, controlling the active areas 10-1 and 10-2 of thememory array basic unit 11, may or may not be common to the active areas10-1 and 10-2.

In the prototype examples (FIGS. 7 and 9), the period γ usable fortransfer of the control signal or the data signal is 1 cycle. In thepresent exemplary embodiment, the period γ usable for transfer of thecontrol signal or the data signal is 2 cycles, as shown in FIG. 12. Thedelay γ of the control signal or the data signal, transferred to theactive area 10-1 (10-1 control delay) is 2 cycles, with the delay γ ofthe control signal or the data signal, transferred to the active area10-2 (10-2 control delay) being shorter than the 10-1 control delay.

The sub-controller 12 receives the timing signal generated by thecontrol circuit 6 to newly generate or modify the timing signal togenerate the period α of the ROW cycle time tRC. Moreover, theinformation is retained in e.g., the buffer 13C to guarantee the writeoperation in the memory cells in the memory array basic unit 11.

In the present exemplary embodiment, the data BL0 and BL1, out of theserially delivered write data (4-bit data BL0 to BL3) with the burstlength=4, are written in parallel in the active area 10-1, while thedata BL2 and BL3 are written in parallel in the active area 10-2, asshown in FIG. 12.

In READ operation, the control delay and the output delay γ in theactive area 10-1 are both 2 cycles, with the control delay and theoutput delay in the active area 10-2 being shorter than those in theactive area 10-1, as shown in FIG. 13. The 2-bit data BL0 and BL1 areread from the active area 10-1, while the 2-bit data BL2 and BL3 areread from the active area 10-2, during the selection time α (2 cycles).During the output delay γ, the 2-bit data BL2 and BL3 from the activearea 10-2 get to the data control circuit 7 in one cycle. The 2-bit dataBL0 and BL1 from the active area 10-1 get to the data control circuit 7via the buffer 13C in two cycles with a delay with respect to the 2-bitdata BL2 and BL3. The data control circuit 7 transforms the parallel4-bit data of BL2, BL3, BL0 and BL1 into serial 4 bits which are outputin 2 cycles (double data rate) from the data terminal. On the whole,serial 4-bit read data are output from the 36 data output terminals. Acycle time since the CMD (READ) is inputted until the first bit data BL2is outputted is 5 (latency θ).

For both WRITE and READ, the control delay/output delay is determined bythe characteristic of the remote end memory cell. The making interval ofconsecutive commands (CMD to CMD period β) is 2 cycles, while theselection time α of the active area is 2 cycles.

FIG. 14 is a timing chart illustrating another example of a writeoperation in the exemplary embodiment 1 of FIG. 11. In correspondencewith the burst length=4, 2 cycles are needed for serially inputting the4-bit data of the columns BL0 to BL3. When the BL0 and BL1 are prepared,transfer of the control signal and the data signal to the active area10-1 is started.

The data BL0 and BL1, already prepared, are transferred on the readwrite bus (RWBS) from the data control circuit 7 via the buffer 13Btowards the active area 10-1 in two cycles (2-stage pipeline) (10-1control delay). When the data BL2 and BL3, serially inputted next to thedata BL0 and BL1, are prepared, transfer of the control signal and thedata signal to the active area 10-2 is started. The data BL2 and BL3 aretransferred from the data control circuit 7 towards the active area 10-2on the read write bus (RWBS) (10-2 control delay).

During the control delay γ, the control signal and the data signal aretransferred through two stages of pipelines (Pipeline1 and Pipeline2).

Outputs from the buffers 13A and 13B and outputs of the control signaland the data signal to the address/command bus and the read write bus(RWBS) from the control circuits 6 and 7 are overlapped temporally. Thebuffers 13A and 13B receive the control signal and the data signal tothe active area 10-1 transferred on the address data bus and the readwrite bus (RWBS). The control signals, such as address/command, aresupplied to the buffer 13C and a control XDEC circuit selects the activearea 10-1 or 10-2 of the memory cell array.

The data BL0 and BL1 are transferred to the active area 10-1 through thetwo stages of pipelines (Pipeline1 and Pipeline 2). On the other hand,the data BL2 and BL3 get to the active area 10-2 through the singlestage pipeline (Pipeline2), after which data is actually written in theactive areas 10-1 and 10-2 of the memory array basic units (row cycletime tRC: α) through the third stage pipeline (Pipeline3).

FIG. 15 is a timing chart showing another example read operation of theexemplary embodiment 1 of FIG. 11. When the CMD (READ command) has beendelivered, a control signal (command)/address signal from the controlcircuit 6 is transferred towards the active areas 10-1 and 10-2 viabuffer 13A on the address/command bus through the two-stages ofpipelines with control delay γ (Pipeline1 and Pipeline 2).

In FIG. 15, the control signal (command)/address signal from the controlcircuit 6 is expressed as separate signals (10-1 control delay and 10-2control delay) for the active areas 10-1 and 10-2. However, signals maybe transferred as a common signal, in which case higher efficiency maybe attained insofar as power consumption is concerned.

In case the control signal (command)/address signal from the controlcircuit 6 is to be a signal common to the active areas 10-1 and 10-2,the control signal (command)/address signal, outputted during the cycle1 from the control circuit 6 to the address/command bus, is transferredduring the cycle 2 via the buffer 13A to the active area 10-1. Duringthe cycle 2, the control circuit 6 holds the same control signal(command)/address signal as that for the cycle 1 and outputs the signalto the address/command bus. The signal is transferred to the active area10-2. The same signal is maintained during the cycle 2, that is, in casethe signal is High/Low, the same signal High/Low is maintained duringthe cycle 2. Hence, higher efficiency may be attained because of absenceof switching of charging/discharging.

Subsequently, by the third pipeline (Pipeline3), data is read from thememory cell array within the row cycle time α.

In reading the data BL0 to BL3, which have been described in connectionwith the write operation of FIG. 14, the data BL0 and BL1 are read fromthe active area 10-1 via the buffer 13B on the read write bus (RWBS)through two-stages of pipelines (Pipeline 4 and Pipeline 5) to the datacontrol circuit 7. The data BL2 and BL3 are read from the active area10-2 on the read write bus (RWBS) through a single stage pipeline(Pipeline 4) to the data control circuit 7.

The data BL2 and BL3, which arrives first at the data control circuit 7from the read write bus (RWBS), are serially output in the sequence ofBL2 and BL3. Next, the data BL0 and BL1 are serially output in thesequence of BL0 and BL1. The number of cycles since CMD (READ) isinputted until the first data BL2 is outputted is 5 (=latency θ).

The outputting sequence of BL0 to BL3 may be re-arranged at a stage ofoutputting to the data terminal. Or, instead of re-arranging, theoutputting sequence of BL0 to BL3 may be defined by designspecifications.

It is noted that, in FIGS. 14 and 15, the internal operations for thesecond and third ones of consecutive commands (CMD) are omitted, thatis, not shown.

Returning to FIGS. 12 and 13, in case of receiving consecutive commands,the apparent cycle of the row cycle time (α: selection time) is reducedby the pipelining of the row cycle time (α) and the control delay (γ) ofthe control signal and the data signal. That is, in the example shown inFIG. 12, the row cycle time (α: selection time) for the CMD deliveredlast time is temporally overlapped with the control delay (γ) of thecontrol signal and the data signal for the current CMD, that is, thesetwo co-exist at the same time instant), and a pipelining operation isgoing on. The output delay (γ) to the CMD delivered last time istemporally overlapped with the row cycle time (α: selection time) forthe current CMD, that is, these two co-exist at the same time instant,indicating that a pipelining operation is proceeding.

Specifically, the address/command bus for transferring a control signal,such as an address or a command, and the read write bus (RWBS), an IOline for transferring the data signal, are pipeline-controlled toseparate the control delay (γ) of the control signal and the data signalfrom the row cycle time (α: selection time). The time period γ hasmultiple cycles in correspondence with the pipeline control (theprototype example: 1 cycle; the present exemplary embodiment: 2 cycles),while the number of cycles of α is reduced to match to that of γ (theprototype example: 3 cycles; present exemplary embodiment: 2 cycles). Inthis manner, for two commands delivered at an earlier time and at alater time, α for the earlier command is temporally overlapped with thelater command, by way of a performing pipelining operation.

In the present exemplary embodiment, the sub-controller 12 operates tocause the control signal and the data signal in the address/commandcontrol circuit 6 and the data control circuit 7 in the memory cellarray to be pipelined by the buffers (pipeline registers). Thesub-controller 12 controls the memory array basic unit nearer to thecontrol circuits 6 and 7 and those remoter from the control circuits 6and 7 such that they are separated from each other. In this manner, thedelay in the control signal and the data signal (control delay andoutput delay γ) are separated from the ROW cycle tRC (α) and α isreduced to avoid deterioration of the data rate for theinputting/outputting of external data.

Reduction of power consumption by exploiting the trade-off relation willnow be described in connection with the read write bus (RWBS) in thememory cell array configuration of the present exemplary embodiment.

Table 1 shows α, γ and θ of the present exemplary embodiment incomparison with those of the prototype example. The parameters of theprototype example shown in FIGS. 7A and 7B, which is used as a referenceare as follows:

control delay γ: 1 cycle;

selection time α: 3 cycles;

latency θ: 4 cycles; and

command-to-command interval β: 3 cycles.

In the exemplary embodiment 1,

control delay/output delay: 2 cycles (=2γ),

selection time: 2 cycles (=(⅔)α,

latency=4 cycles (=( 5/4θ); and

command-to-command interval=2 cycles (=(⅔)β).

TABLE 1 Command Td1 (1/f1) Td2 (1/f2) Latency interval Related 1 cycle =1 γ 3 cycle = 1 α 4 cycle = 1 θ 3 cycle = 1 β technique Exemplary 2cycle = 2 cycle = 5 cycle = 2 cycle = embodiment 2 γ (2/3) α (5/4) θ(2/3) β 1 Modification 3 cycle = 3 cycle = 1 α 7.5 cycle = 3 cycle = 1 β3 γ (15/8) θ

The power of the control delay γ of the prototype example of FIGS. 7Aand 7B is taken to be P=n×c×f₁×V². In the exemplary embodiment 1, thecontrol delay γ is 2 cycles which is double that of the prototypeexample. However, the data line of the read write bus (RWBS) is drivenwith a 1 cycle because of pipeline control. The data line is one-half ofthat of the prototype example and hence the capacitance C is alsoone-half of that on the data line of the prototype example. Hence, thefrequency is the same as the frequency f1 of the prototype example. Inthe read write bus (RWBS) in the exemplary embodiment 1, the totalnumber of data lines for parallel transmission of bit data is one-halfthe number n of the prototype example. The capacitance of the data lineis c/2 because of division into two of the data line by the pipelineregister. However, due to the two-stage pipeline configuration, thetotal capacitance is (c/2)×2. Ultimately, the power P1 of the controldelay γ of the exemplary embodiment 1=(n/2)×(c/2)×2×f₁×V²=P/2, that is,½ of that of the prototype example. The delay of the selection time isreduced to (⅔), such that, with a constant power delay product, thepower is 3/2-tupled.

In the WRITE operation, from the ratio of the sum of the power of thecontrol delay and the selection time in the exemplary embodiment 1 tothat in the prototype example, the ratio of the power of the exemplaryembodiment 1 to that of the prototype example may be given approximatelyby(Exemplary embodiment 1)/(Prototype example)=(½+ 3/2)/(1+1)=100%.

In the READ operation, from the ratio of the sum of the power of thecontrol delay, selection time and the output delay in the exemplaryembodiment 1 to that in the prototype example, the power ratio is givenby(Exemplary embodiment 1)/(Prototype example)=(½+ 3/2+½)/(1+1+1)=83.3%.

In the modification of the exemplary embodiment 1, the values for α andβ are adapted for comparison under the assumption that the numbers ofinput data and output data that may be inputted or outputted to or fromthe semiconductor memory as a system are constant. If the power delayproduct is the same and if the delay Td1 may be set at 3γ (3 cycles),the power may be reduced to one/third in an ideal case. The powerconsumption involved in data input/output or the operation of thecontrol circuits 6 and 7 concerning the control delay γ is one-third ofthat of the prototype example. In the present modification, the ROWcycle time is α and adapted to the memory array operation. Hence, thepower consumption is the same as that of the prototype example. If thecurrent consumption in the delay of the control signal and the datasignal (control delay γ) is non-negligible as compared to the currentconsumption during the ROW cycle time, and has become equal to it, theratio of the power consumption in its entirety, derived from the powerdelay product=constant, may be given by the following equation for theWRITE operation:(Modification)/(Prototype example)=(⅓+1)/(1+1)=66%In the READ operation:(Modification)/(Prototype example)=(⅓+1+⅓)/(1+1+1)=55.5%.

The actual circuit design is complex such that power consumption may notbe determined by the above mentioned simplified calculations. However,reduction of power consumption in γ alone to one half may reduce thetotal current consumption to 75%.

By the configuration of the memory cell array of the present exemplaryembodiment, it has become possible to reduce power consumption. Themeritorious effect of the embodiments may further be enhanced in casecurrent consumption in γ is not negligible against that in α and furtherthe large/small ratio of the (current consumption in γ)>(currentconsumption in α) increases further.

The data line (IO line) in the read write bus (RWBS) in the memory cellarray configuration in the exemplary embodiment 1 will now be described.By allocating BL0/BL1 and BL2/BL3 to the active areas 10-1 and 10-2,respectively, 144 bit data of BL0 to BL3, corresponding to the number ofthe data terminals×36, with the burst being 4, are made to beinputted/outputted on 72-data data lines (IO lines). In contrast, in theprototype example of FIG. 6, data is inputted/outputted on 144 datalines (IO lines) for 144 bit data from the control circuit 7.

This is made possible in the exemplary embodiment 1 by a memory cellarray configuration in which the data lines (IO lines) of the read writebus (RWBS) are pipeline-controlled to enable serial transfer intime-division.

Since data may be inputted/outputted within the memory cell array by 72out of the total of 144 data lines (IO lines), an area for 72 excessdata lines (IO lines) may be exploited as interconnect resources. Forexample, power supply interconnects may be provided in an area ofinterconnect resources for the excess data lines (IO lines).

Conversely, in the exemplary embodiment 1, 576 bit data may beinputted/outputted in 288 IO lines in which 288 bit data can beinputted/outputted at the maximum of the IO lines in the prototypeexample.

Exemplary Embodiment 2

In semiconductor memories, it is a common practice to switch among aplurality of operation specifications within the same chip. As anexemplary embodiment 2, a configuration of 36 data terminals and burstlength=8 will be described, and specifications for switching in theinside of the chip from the exemplary embodiment 1 are also described.

FIG. 16 illustrates a configuration example of the exemplary embodiment2 with the burst length=8. In the exemplary embodiment 1 with the burstlength=4, the memory cell array is divided into two basic units 11. Inthe exemplary embodiment 2, the memory cell array is divided into fourmemory array basic units 11, as shown in FIG. 16. Columns BL0/BL1,BL2/BL3, BL4/BL5 and BL6/BL7 are respectively allocated to the activeareas 10-1, 10-2, 10-3 and 10-4 in the respective four memory arraybasic units 11. In the exemplary embodiment 2, the total number of thedata lines of the read write bus (RWBS), required for the configurationof the burst length=8 and the number of the data terminals=36, is 72.The address/command bus from the control circuit (address, command,timing controller) 6 and the read write buses (RWBS) from the datacontrol circuit 7 includes three buffers (pipeline registers) 13A, 13Band 13C thus forming four-stage pipelines in correspondence with thememory array basic units 11 from the near end to the remote end.

FIG. 17 illustrates the timing chart of the WRITE operation of FIG. 16.FIG. 18 illustrates the timing chart of its READ operation of FIG. 16.In FIG. 16, 8-bit data for 8 columns BL0 to BL7, in which WRITE is inaccordance with the burst length=8, are serially delivered at a doubledata rate (in 4 cycles) to the 36 data terminals (DQ). Four cycles areallocated to the control delay γ in correspondence with the four stagepipelines.

The address signal, command signals and timing signal to control theactive area 10-1, and 2 bit data (BL0 and BL1) written in the activearea 10-1, are outputted, at the second clock cycle next following theCMD input, from the control circuit 6 and the data control circuit 7 tothe sections of the address/command bus and the read write bus (RWBS)corresponding to the first memory array basic unit. The signals and thedata BL0 and BL1 are then sequentially transferred at the third, fourthand fifth clock cycles from the first, second and third stages of thebuffers 13A and 13B to the sections of the address/command bus and theread write bus (RWBS) corresponding to the second, third and fourthmemory array basic units. It is noted that the 10-1 control delay is 4cycles of from the second to the fifth cycles.

The address signal, control signals, and timing signal to control theactive area 10-2 and 2 bit data (BL2 and BL3) written in the active area10-2 are outputted at the third clock cycle from the control circuit(address, command, timing controller) 6 and the data control circuit 7to the sections of the address/command bus and the read write bus (RWBS)corresponding to the first memory array basic unit. The signals and thedata BL2 and BL3 are then sequentially transferred at the fourth andfifth clock cycles from the first and second stages of the buffers 13Aand 13B to the sections of the address/command bus and the read writebus (RWBS) corresponding to the second and third memory array basicunits. It is noted that the 10-2 control delay is 3 cycles of from thethird to the fifth cycles.

The address signal, control signals, and timing signal to control theactive area 10-3 and 2 bit data (BL4 and BL5) written in the active area10-3 are outputted at the fourth clock cycles from the control circuit 6and the data control circuit 7 to the sections of the address/commandbus and the read write bus (RWBS) corresponding to the first memoryarray basic unit. The signals and the data are then transferred at thefourth clock cycle from the first stages of the buffers 13A and 13B tothe sections of the address/command bus and the read write bus (RWBS)corresponding to the second memory array basic unit. It is noted thatthe 10-3 control delay is 2 cycles of from the fourth to the fifthcycles.

The address signal, control signals, and the timing signal to controlthe active area 10-4 and 2 bit data (BL6 and BL7) written in the activearea 10-4 are outputted at the fifth clock cycle from the controlcircuit 6 and the data control circuit 7 to the sections of theaddress/command bus and the read write bus (RWBS) corresponding to thefirst memory array basic unit. The 10-4 control delay is just one cycle,that is, the fifth clock cycle.

The 4 cycles of from the sixth to the ninth clock cycles represent theselection time α, and parallel 2 bits data BL0/BL1, BL2/BL3, BL4/BL5,BL6/BL7 are written in the active areas 10-1 to 10-4 of the four memoryarray basic units. The CMD to CMD period β is 4 cycles. At the fifthclock cycle, leading 2-bits BL0 and BL1 of the 8-bit serial dataBL0-BL7, corresponding to the next CMD, are serially entered. The ROWaddresses, controlling, for example, the active areas 10-1 and 10-2 ofthe memory array basic units 11, may be common to the active areas 10-1and 10-2, or may differ from each other.

In the prototype example (FIGS. 7 and 9), the period γ usable fortransfer of the control signal or the data signal, is 1 cycle. In thepresent exemplary embodiment, the period γ usable for transfer of thecontrol signal or the data signal is 4 cycles, as shown in FIG. 17. Thedelays (10-1 control delay, 10-2 control delay, 10-3 control delay, and10-4 control delay) of the control signals and the data signalstransferred to the active areas 10-1 to 10-4, corresponds to 4, 3, 2 and1 cycles, respectively.

In the present exemplary embodiment, the timing signal, generated by thecontrol circuit 6, is received by the sub-controller 12. Thesub-controller 12 then newly generates or corrects the timing signal togenerate a period α of ROW cycle time tRC. Also, the information islatched by the buffer 13C to guarantee the write operation to the memorycell in the memory array basic unit 11.

In READ operation, in the present exemplary embodiment, the address,control signal and timing signal to the active area 10-1 are outputtedfrom the control circuit 6 to the address/command bus at the firstclock, and transferred over 4 cycles to the active area 10-1 via threestages of the buffers 13A. The address signal and the command signal tothe active area 10-2 are outputted from the control circuit 6 to theaddress/command bus at the second clock, and transferred from thecontrol circuit 6 over 3 cycles to the active area 10-2 via two stagesof the buffers 13A. The address signal and the command signal to theactive area 10-3 are outputted from the control circuit 6 to theaddress/command bus at the third clock, and transferred from the controlcircuit 6 over 2 cycles to the active area 10-3 via three stages of thebuffers 13A. The address signal and the command signal to the activearea 10-4 are outputted from the control circuit 6 to theaddress/command bus at the fourth clock and thence supplied to theactive area 10-4.

BL0 to BL7 are read from the active areas 10-1 to 10-4 during the fourcycles of from the fifth to the eighth cycles.

At the ninth clock cycle, the read data BL6 and BL7 from the active area10-4 get to the data control circuit 7 in parallel, and are read as2-bit serial data at the tenth clock cycle in the order of BL6-BL7. Thedata BL4 and BL5, read from the active area 10-3, get to the datacontrol circuit 7 in parallel, via the buffer 13B, at the tenth clockcycle, and are read as 2-bit serial data at the 11th clock cycle in theorder of BL4 and BL5. The data BL2 and BL3, read from the active area10-2, get to the data control circuit 7 in parallel, via two-stagebuffer 13B, at the 11th clock cycle, and are read as 2-bit serial dataat the 12th clock cycle in the order of BL2 and BL3. The data BL0 andBL1, read from the active area 10-1, get to the data control circuit 7in parallel, via three-stage buffer 13B, at the 12th clock cycle, andare read as 2-bit serial data at the 13th clock cycle in the order ofBL0 and BL1. On the whole, serial 8-bit read data are outputted from the36 data terminals. The number of cycles from the input of CMD (READ)until the first bit data BL6 is outputted is 9 (latency θ=9).

For both WRITE and READ operations, the control delay/output delay isdetermined by the characteristic of the remote end memory cell. Theinterval between consecutive commands (period β between neighboringCMDs) is 4 cycles, the control delay/output delay is 4 cycles, and theactive area selection time α is 4 cycles.

FIG. 19 illustrates the write operation of FIG. 17 in terms ofpipelines. The control delay of 2-bit parallel transmission on the readwrite bus (RWBS) to the active area 10-1 of serially inputted BL0 andBL1, out of BL0 to BL7, serially inputted as 8-bit serial data incorrespondence with the burst length=8 (10-1 control delay), correspondsto four-stage pipelines of clock cycles 2-5 (Pipeline1-Pipeline 4). Thecontrol delay of 2-bit parallel transmission on the read write bus(RWBS) to the active area 10-2 of serially inputted BL2 and BL3 (10-2control delay) corresponds to three-stage pipelines of clock cycles 3-5(Pipeline2-Pipeline 4). The control delay of 2-bit parallel transmissionon the read write bus (RWBS) to the active area 10-3 of seriallyinputted BL4 and BL5 (10-3 control delay) corresponds to two-stagepipelines of clock cycles 4-5 (Pipeline3-Pipeline 4). The control delayof 2-bit parallel transmission on the read write bus (RWBS) to theactive area 10-4 of serially inputted BL6 and BL7 (10-4 control delay)corresponds to a single-stage pipeline of clock cycle 5 (Pipeline 4).

The write in the active areas 10-1 to 10-4 (ROW cycle (a)) is done in afifth stage pipeline (Pipeline5), with a being 4 cycles.

FIG. 20 illustrates the consecutive write operations of FIG. 17 in termsof pipelines. The CMD to CMD period β is four cycles. The four cycles offrom a clock cycle 6 next following the clock cycle 5 when the controldelay γ of a previous CMD (WRITE command) ends to the clock cycle 9represent the control delay γ of the next CMD (WRITE command). Thecontrol delay γ of the next CMD (WRITE command) is temporally overlappedwith the selection time of 10-1 to 10-4 of the previous inputtedcommand.

FIG. 21 illustrates the consecutive READ operations of FIG. 18 in termsof pipelines. The control delay in transferring the address and thecommand to the active area 10-1 to the address/command bus (10-1 controldelay) corresponds to four-stage pipelines (Pipeline1 to Pipeline4) ofclock cycles 2-5. The control delay in transferring the address and thecommand to the active area 10-2 to the address/command bus (10-2 controldelay) corresponds to three-stage pipelines (Pipeline2 to Pipeline4) ofclock cycles 3-5. The control delay in transferring the address and thecommand to the active area 10-3 to the address/command bus (10-3 controldelay) corresponds to two-stage pipelines (Pipeline3 to Pipeline4) ofclock cycles 4-5. The control delay in transferring the address and thecommand to the active area 10-4 to the address/command bus (10-4 controldelay) corresponds to a single-stage pipeline (Pipeline4) of a clockcycle 5. During the clock cycles 6-9, 2-bit data are read from theactive areas 10-1 to 10-4.

The 2-bit data BL6 and BL7, read from the active area 10-4, aredelivered during the clock cycle 10 via the read write bus (RWBS) to thedata control circuit 7 and are serially outputted at the clock cycle 11in the order of BL6 and BL7. The 2-bit data BL4 and BL5, read from theactive area 10-3, are delivered during the clock cycle 10 to the readwrite bus (RWBS) so as to be delivered via a single stage of the buffer13B to the data control circuit 7 and output at the clock cycle 12 inthe order of BL4 and BL5. The 2-bit data BL2 and BL3, read from theactive area 10-2, are outputted during the clock cycle 10 to the readwrite bus (RWBS), then supplied via two stages of the buffers 13B to thecontrol circuit 7 at the clock cycle 11 and serially outputted at theclock cycle 12 in the order of BL2 and BL3. The 2-bit data BL0 and BL1,read from the active area 10-1, are outputted during the clock cycle 10to the read write bus (RWBS), then supplied via three stages of thebuffers 13B to the data control circuit 7 at the clock cycle 11 andserially outputted at the clock cycle 14 in the order of BL0 and BL1.

FIG. 22 is a timing diagram illustrating an example operation of WRITEto READ. The CMD interval is 4 cycles. The clock cycles 2-5 are theWRITE command control delay. At the clock cycle 5, the next CMD (READ)is delivered. During the clock cycles 6-9, the READ control delay istemporally overlapped with the WRITE selection time. The cock cycles10-13 are the READ selection time. The cock cycles 10-13 are the READoutput time. During the clock cycles 15-18, the 8-bit serial bits BL6,BL7, BL4, BL5, BL2, BL3, BL0 and BL1 are outputted.

FIG. 23 is a timing diagram illustrating an example operation of READ toWRITE. The CMD interval is 4 cycles. The clock cycles 2-5 are READcommand control delay. At the clock cycle 5, the next CMD (WRITE) isdelivered. 8-bit serial data are delivered during 4 cycles of the clockcycles 5-8. During the clock cycles 6-9, the READ control delaytemporally overlaps with the WRITE selection time. The clock cycles10-13 are the READ selection time, and the clock cycles 10-13 are theWRITE output time and the READ output delay. During the clock cycles11-14, the 8-bit serial bits BL6, BL7, BL4, BL5, BL2, BL3, BL0 and BL1are output.

In the exemplary embodiment 2, the burst length=8. The control delay γ=4cycles and the selection time α=4 cycles. The command interval=4 cyclesand the latency at read time=9.

In the exemplary embodiment 2, as in the exemplary embodiment 1, thecontrol delay or output delay γ may be extended to achieve the reductionof power consumption. In contrast to 288 IO lines, 72 IO lines sufficefor the 36×8 number of bit data, so that interconnect resources may beexploited. If larger numbers of data are to be handled, as in theembodiment 1, 1152 number of bit data at the maximum can be processedwith 288 IO lines in the exemplary embodiment in which read and writemay be quadrupled.

Exemplary Embodiment 3

FIG. 24 is a diagram illustrating the switching of the burst lengthaccording to an exemplary embodiment 3. The number of data terminals is36, and the burst length is 8. 8-bit data, serially inputted at oneterminal, are written in eight columns BL0-BL7 in the active area and8-bit data read from the/8 columns BL0-BL7 in parallel are seriallyoutputted at the one terminal. In correspondence with the 36 dataterminals provided in the semiconductor device, 36×8=288 data areread/written. The operation in this case is the same as that of theexemplary embodiment 2.

If the burst length is changed from 8 to 4 (4 bit data BL0-BL3 isinputted/outputted), the operation is similar to that of the exemplaryembodiment 1 provided that the pipeline control by the buffers 13A1 and13B1 arranged between the active area 10-1 and the active area 10-2 andthat by the buffers 13A3 and 13B3 arranged between the active area 10-3and the active area 10-4 are invalidated (pipeline deactivation). Incase the pipeline control of the buffer, that is, the pipeline registerfunction, is to be invalidated, the buffers 13A1, 13B1, 13A3 and 13B3 donot perform a latch operation and output the input signal through. Forexample, if the buffers (13A1, 13B1, 13A3, and 13B3) are made up of aswitch and a flip-flop and include a latch controlled to a through stateor to a hold state by e.g., a clock signal (D latch), the switch isfixed at on such as to output an input through at all times. If thebuffers are to be run as pipeline registers, the switch may, forexample, be controlled to be turned on/off to capture and hold the inputon a per cycle basis.

With the number of data terminals=36 and the burst length=2 (BL0, BL1),the pipeline control by the buffers 13A2 and 13B2 between the activearea 10-2 and the active area 10-3 is invalidated, at the same time aspipeline control by the buffers (13A1, 13B1, 13A3, 13B3) is invalidated.

In the present exemplary embodiment, it is possible to use such a modein which the latency θ and the CMD to CMD period β are made variabledepending on the remoteness/closeness of an access path. In case theactive area is of ×36×2 bits=72 IOs, the memory cell array of a burstlength=8 (BL0-7) (buffers 13A1-13A3, and buffers 13B1-13B3 beingactivated) is switched to a burst length=2 (BL0-BL1) (only buffers 13A2and 13B2 being activated, with buffers 13A1, 13A3, 13B1, and 13B3 beingdeactivated), just one of the active areas 10-1, 10-2, 10-3 and 10-4 tobe accessed suffices, depending on the address selected. The CMD to CMDperiod β is made variable with the active areas 10-1, 10-2, 10-3 or 10-4accessed.

FIG. 25A to 25D are timing charts illustrating switching of the burstlengths for READ operation in the exemplary embodiment 3.

The following described switching of the burst length from 8 to 2. Inthis case, the CMD to CMD period β is varied in the active areas 10-1,10-2, 10-3 and 10-4 to be accessed. Referring to FIG. 25A, to read(READ) BL0 and BL1 from the active area 10-1, the 10-1 control delay is4 cycles, 10-1 selection time=2 cycles and 10-1 output delay=4 cycles,and the latency θ=10. The CMD to CMD period β is 10. Referring to FIG.25B, to read (READ) BL2 and BL3 from the active area 10-2, the 10-2control delay is 3 cycles, 10-2 selection time=2 cycles and 10-3 outputdelay=3 cycles, with the latency θ=8. Referring to FIG. 25C, to READ BL4and BL5 from the active area 10-3, the 10-2 control delay is 2 cycles,10-2 selection time=2 cycles and 10-2 output delay=2 cycles, with thelatency θ=6. The CMD to CMD period β is 6. Referring to FIG. 25D, toread BL6 and BL7 from the active area 10-4, the 10-4 control delay is 1cycle, 10-4 selection time=2 cycles and 10-4 output delay=2 cycles, withthe latency θ=4. The CMD to CMD period β is 4. In the active areas 10-1,10-2, 10-3 and 10-4, the CMD to CMD period β and the latency θ arevaried.

Exemplary Embodiment 4

Since the memory array basic unit 11 includes a sub-controller 12, eachactive area may be configured as a sub-bank. FIG. 26 illustrates anexemplary embodiment 4. In FIG. 26, four sub-banks 15 are provided perbank 14. An address/command bus and a read write bus (RWBS) are providedrespectively with three stages of buffers (13A1 and 13B1; 13A2 and 13B2;and 13A3 and 13B3), each of the buffers operating as pipeline registers.With the burst length=8, a single data terminal serially inputs/outputs8-bit data BL0-BL7 associated with eight columns (BL0-7). For the 36data terminals, the read write bus includes 36×2 data lines. Out ofBL0-BL7 for the burst length=8, BL0 and BL1 are transferred via threestages of the buffers 13B on the read write bus so as to be writtenin/read from the active area 10-1. BL2 and BL3 are transferred via twobuffers 13B on the read write bus so as to be written in/read from theactive area 10-2. BL4 and BL5 are transferred via a single buffer 13B onthe read write bus so as to be written in/read from the active area10-3. BL6 and BL7 are transferred on the read write bus so as to bewritten in/read from the active area 10-4.

When the array for the burst length=8 is switched to the burst length=2,such an operation mode (specification) in which the CMD to CMD period isvaried from β-1 through to β-4 for the active areas 10-1 to 10-4 ispossible. Additionally, the bank 14 is divided into 15 sub-banks forcontrol. For the multiple active areas 10-1 to 10-4 in each bank 14, aplurality of access areas may be accessed by sub-bank control. In thiscase, there may occasionally be such a timing, when a signal crashoccurs on the transfer path on the address/command bus or on thetransfer path on the read write bus. The timing when the signal crashoccurs is defined as a timing when a command input is inhibited. Inaccessing the multiple active areas 10-1 to 10-4 in the bank 14, notmaking a command input, taken as inhibit input, is a prerequisite toavoid the occurrence of malfunction.

FIG. 27A to 27C illustrate examples of command inhibit inputs, andspecifically illustrate a command (CMD) inhibit rule between differentsub-banks, that is, a sub-band to sub-band command inhibit rule. In amemory cell array with a plurality of banks, it is possible tosimultaneously have accesses to access areas of different sub-banks. InFIG. 27A, the command to command interval (interval between READcommands) in the same sub-bank is β-1. The command to command intervalsin FIGS. 27B to 27D are β-2, β-3 and β-4, respectively. For these, theburst length=2. The output delays overlap with one another between thedifferent sub-banks and hence, the command inputs between the differentsub-banks are inhibited.

FIG. 28A to 28C illustrates timing charts for the READ and WRITEoperations using the common IO line (Common IO or CIO). FIG. 28A showsthat, in the case of READ to WRITE (a WRITE command is inputted insuccession to a READ command), the IO line (read write bus) is occupiedby READ, and hence extension of γ directly brings about extension of theCMD to CMD period β. If the read write bus (RWBS) is not the common IObut is a separate IO (SIO) in which I and O are separated from eachother, β=α.

In the case of READ to READ (READ commands are inputted in succession),as shown in FIG. 28B, β=α=2 cycles and, in the case of WRITE to WRITE(WRITE commands are inputted in succession), as shown in FIG. 28C, β=α=2cycles. In the cases of WRITE to READ (a READ command is inputted insuccession to a WRITE command), REF to * (where * is WRITE/READ/REF) (aWRITE/READ/REF command is inputted in succession to a REF (refresh)command) and * to REF (a REF (refresh) command is inputted in successionto a WRITE/READ/REF command), β=α.

Exemplary Embodiment 5

FIG. 29 illustrates a configuration of an exemplary embodiment 5. Theread write bus (RWBS) is configured as a separate IO (SIO) in which datalines are separated into data lines for WRITE and data lines for READ.That is, a dedicated WRITE bus (WBS) 16 and a dedicated READ bus (RBS)17 are provided. Each of the buses 16 and 17 includes a buffer 13between neighboring active areas. Write data from the data controlcircuit 7 to the active area in the memory array basic unit 11 aretransferred on the dedicated WRITE bus (WBS) 16 under pipeline control.Read data from the active area 10 are transferred on the dedicated READbus (RBS) 17 to the data control circuit 7.

With the burst length=8, 8-bit data BL0 to BL7, associated with the 8columns (BL0-BL7), are serially inputted/outputted to/from a single dataterminal. For 36 data terminals, the number of data lines of thededicated WRITE bus (WBS) 16 is 36×2=72, and the number of data lines ofthe dedicated READ bus (RBS) 17 is 36×2=72.

Out of 8-bit data BL0-BL7, corresponding to the burst length=8, 2-bitdata BL0 and BL1 are transferred from the data control circuit 7 viathree stages of buffers 13B on the dedicated WRITE bus (WBS) 16 andwritten in the active area 10-1. 2-bit data BL2 and BL3 are transferredfrom the data control circuit 7 via two stages of the buffers 13B on thededicated WRITE bus (WBS) 16 and written in the active area 10-2. 2-bitdata BL4 and BL5 are transferred from the data control circuit 7 via asingle stage of the buffer 13B to the dedicated WRITE bus (WBS) 16 andwritten in the active area 10-3. 2-bit data BL6 and BL7 are transferredfrom the data control circuit 7 to the dedicated WRITE bus (WBS) 16 andwritten in the active area 10-4. It is noted that the BL6 and BL7 arenot transferred beyond the buffer 13B.

2-bit data B6 and BL7, read from the active area 10-4, arrive at thedata control circuit 7 from the dedicated READ bus (RBS) 17 within onecycle. 2-bit data BL4 and BL5, read from the active area 10-3, aretransferred via a single stage of the buffer 13B on the dedicated READbus (RBS) 17, and arrive at the data control circuit 7 within twocycles. 2-bit data BL2 and BL3, read from the active area 10-2, aretransferred via two stages of the buffers 13B on the dedicated READ bus(RBS) 17, and arrive at the data control circuit 7 within three cycles.2-bit data BL0 and BL1, read from the active area 10-1, are transferredvia three stages of the buffers 13B on the dedicated READ bus (RBS) 17,and arrive at the data control circuit 7 within four cycles.

FIG. 30A to 30C are timing charts illustrating the operation of theexemplary embodiment 5 of FIG. 29. FIG. 30A is a timing chart for READto WRITE (a WRITE command is inputted in succession to a READ command),with β=α. FIGS. 30B and 30C are similar to FIGS. 29B and 29C; in READ toREAD (READ commands are inputted in succession), β=α=2 cycles, and inWRITE to WRITE (WRITE commands are inputted in succession), β=α=2cycles. In WRITE to READ (a READ command is inputted in succession to aWRITE command), REF to * (where * is WRITE/READ/REF, a WRITE/READ/REFcommand is inputted in succession to a REF (refresh) command), and in *to REF (a REF (refresh) command is inputted in succession to aWRITE/READ/REF command), β=α.

Exemplary Embodiment 6

An exemplary embodiment 6 will now be described. FIG. 32 illustrates anexample of address allocation, that is, an example of selecting thememory array basic unit 11 with X11 and X12 of the X-address. In theexemplary embodiment 6, the burst length is 8 and there are 8 read writebuses (RWBS) for a single data terminal, such that, for 36 dataterminals, the active area 10-1 associated with 288 IO lines isselected. A memory array basic unit 11 ₁ is selected for (X11,X12)=(0,0), a memory array basic unit 11 ₂ is selected for (X11,X12)=(1,0), a memory array basic unit 11 ₃ is selected for (X11,X12)=(0,1) and a memory array basic unit 11 ₄ is selected for (X11,X12)=(1,1). A row (word line) in the memory array basic unit 11 isselected by 11 bits of X0 to X10.

FIG. 33 illustrates, in the exemplary embodiment 6, an example ofselecting an active area in parallel for the control line(address/command bus) and the IO line (read write bus). X11 and X12 inFIG. 32 are invalid (don't care), such that, the column decoder (COLDECODER) selects the active area using two bits X11 and X12 of theX-address. Out of the data of columns BL0-BL7, corresponding to theburst length=8, input/output at the single data terminal,

BL0 and BL1 are selected, if (X11, X12)=(0,0),

BL2 and BL3 are selected, if (X11, X12)=(1,0),

BL4 and BL5 are selected, if (X11, X12)=(0,1), and

BL6 and BL7 are selected, if (X11, X12)=(1,1).

The rows in each memory array basic unit are selected by X0-X10. The rowdecoder (ROW DECODER) is made up of four XDECs shown on the left side inFIG. 33. A pre-decoder 18 switches between a row and a column. In FIG.33, the pre-decoder 18 may be changed over on setting at the time ofmanufacture, or a test mode. In case the column decoder selects anactive area using X11 and X12 of the X-address, the row decoder (ROWDECODER) does not decode X11 and X12.

FIG. 34 illustrates a modification of the present exemplary embodiment.X11 of the X-address is decoded by the row decoder. In the row decoder,X12 is invalid (don't care). X12 is decoded by the column decoder. Inthe column decoder, X11 is invalid (don't care). Out of the data of thecolumns BL0-BL7, corresponding to the burst length=8, input/output onthe single data terminal, BL0/BL1 and BL2/BL3 are selected for X12=0 andBL4/BL5 and BL6/B7 are selected for X12=1. The read write bus (RWBS)includes four data lines (IO lines) for a single data terminal, and 144data lines (IO lines) for 36 data terminals. The row decoder selectsmemory array basic units 11 ₁, and 11 ₃, if X11=0, while selectingmemory array basic units 11 ₂ and 11 ₄, if X11=1. The row decoderselects a row in the memory array basic unit for X0-X10 of the Xaddress.

BL0-BL3 of the memory array basic unit 11 ₁ are selected, if (X11,X12)=(0,0),

BL0-BL3 of the memory array basic unit 11 ₂ are selected, if (X11,X12)=(1,0),

BL4-BL7 of the memory array basic unit 11 ₃ are selected, if (X11,X12)=(0,1), and

BL4-BL7 of the memory array basic unit 11 ₂ are selected, if (X11,X12)=(1,1).

For X0-X10, the row in each memory array basic unit is selected. Apre-decoder 18 is provided to switch the address for the row and thecolumn for the selection of the active region. The switching may be madein accordance with the operation specifications of the semiconductormemory (that is, fixed in product shipment), or in accordance with atest mode.

A variety of modifications may be derived from the exemplary embodiments1 and 2, as described above.

By pipelining the access latency to the memory cells, such a memory cellarray configuration may be provided in which the number of cycles isable to be reduced to make efficient use of the IO line resources in thememory cell array, even though the latency becomes longer. Thus, powerconsumption may be reduced by exploiting the relationship of trade-offfor θ and γ, as α and β are improved or maintained. Additionally, IOline resources may be exploited as a result of division of active areasin the memory cell array.

In the above mentioned prototype examples, the access time is consideredin relation to remoteness/closeness of an access path. According to theembodiments, in order to reduce power consumption and to improve a ROWcycle, there is provided a memory cell array configuration in which, asan attention is focused on a bus structure or IO lines in a memory cellarray which are made up of a plurality of memory array basic units,there is provided a pipeline architecture on the bus, and which makessuch an operation possible in which the relationship of trade-offbetween the power and the delay is exploited.

In particular, a plurality of active areas split into a plurality ofportions, are activated simultaneously and hence it becomes possible tocontrol data transfer on the bus (IO lines) to the plurality of activeareas, in distinction from an access pattern which depends onlarge/small relation of the data transfer distance via the IO lines,such as accessing a memory cell remote from or close to the controlcircuits 6 and 7.

The memory cell array speed has to be increased by reducing the lengthof the WORD line or the BIT line and by splitting the memory array basicunit. This raises the speed by reducing the row cycle α. However, thedelay in the signal of a control circuit that controls the memory cellarray or the IO line can hardly be ignored. In the present memory cellarray configuration, the power consumption is reduced and IO lineresources may be efficiently exploited as the ROW cycle is maintained orreduced. This is made possible by sub-dividing the control line or theIO line and by exploiting the relationship of trade-off between thepower and the delay in the control signal or the IO line signal.

The particular exemplary embodiments or examples may be modified oradjusted within the scope of the entire disclosure of the presentinvention, inclusive of claims, based on the fundamental technicalconcept of the invention. In addition, a variety of combinations orselection of elements disclosed herein may be made within the context ofthe claims. That is, the present invention may cover a wide variety ofmodifications or corrections that may occur to those skilled in the artin accordance with the entire disclosure of the present invention,inclusive of claims, and the technical concept of the present invention.

What is claimed is:
 1. A semiconductor device comprising: a memory cellarray including a plurality of memory array basic units, each includinga plurality of memory cells for write and read operations; a first buscoupled to said plurality of memory array basic units, said first busconfigured to allow transfer of address/control signals thereon, saidfirst bus including at least one first buffer circuit configured tooperate as a pipeline register; a second bus coupled to said pluralityof memory array basic units, said second bus configured to allowbidirectional transfer of data thereon, said second bus including atleast one second buffer circuit configured to operate as a pipelineregister; a first control circuit configured to send saidaddress/control signals on said first bus from one end thereof,sequentially in a sequence of from said address/control signals destinedfor said memory array basic unit located at a remote end side withrespect to said one end of said first bus, to said address/controlsignals destined for said memory array basic unit at a near end sidewith respect to said one end of said first bus; and a second controlcircuit that in a write access, is configured to send write data on saidsecond bus from one end thereof, sequentially in a sequence of fromwrite data destined for said memory array basic unit located at a remoteend side with respect to said one end of said second bus to write datadestined for said memory array basic unit at a near end side withrespect to said one end of said second bus, said write data transferredfrom said second bus to each of said memory array basic units beingwritten in each of said memory array basic units, in a read access, readdata from a plurality of said memory array basic units being transferredon said second bus to arrive at said second control circuit, in asequence of from said read data from said memory array basic unitlocated at said near end side with respect to said one end of saidsecond bus to said read data from said memory array basic unit locatedat said remote end side with respect to said one end of said second bus,said second control circuit configured to output said arrived read data.2. The semiconductor device according to claim 1, wherein said memorycell array includes first to Nth memory array basic units, where N is apre-set positive integer not less than 2, said first bus including a(N−1)-number of said first buffer circuits arranged between (N−1) pairsof neighboring memory array basic units, respectively, said second busincluding a M-number of parallel data lines per data terminal configuredto serially input/output M×N bit data corresponding to a burst lengthM×N, where M is a pre-set positive integer not less than 1, said secondbus including (N−1) number of said second buffer circuits arrangedbetween (N−1) pairs of neighboring memory array basic units,respectively, wherein said first control circuit is configured tosequentially send to said first bus, on a per cycle basis, saidaddress/control signals in a sequence of from said address/controlsignals destined for a remotest one of said first to Nth memory arraybasic units with respect to said one end of said first bus to saidaddress/control signals destined for a nearest one of said first to Nthmemory array basic units with respect to said one end of said first bus,in the write access, said second control circuit is configured toreceive M×N bit data serially inputted from said data terminal, saidsecond control circuit configured to sequentially send said M×N bitdata, M bits each time, in parallel, to said M-number of data lines ofsaid second bus, on a per cycle basis, N times, in a sequence of fromsaid data destined for said remotest one of said first to Nth memoryarray basic units to said data destined for said nearest one of saidfirst to Nth memory array basic units, said M bit data, transferred toeach of said first to Nth memory array basic units from said second busbeing written in each of said M-number of said columns of said first tosaid Nth memory array basic units, wherein in the read access, M bitsdata read from a M-number of columns of each of said first to said Nthmemory array basic units are transferred on said second bus tosequentially arrive at said second control circuit in a sequence of fromsaid NI bit data read from said nearest one of said first to Nth memoryarray basic units to said M-number of bits of data read from saidremotest one of said first to Nth memory array basic units, said secondcontrol circuit configured to serially output said M×N bit data fromsaid data terminal.
 3. The semiconductor device according to claim 1,wherein said first bus includes: said first buffer circuit between eachpair of a plurality of pairs of neighboring memory array basic units,and said second bus includes said second buffer circuit between eachpair of a plurality of pairs of neighboring memory array basic units, atleast one pair of said first buffer circuit and said second buffercircuit out of said a plurality of first buffer circuits and a pluralityof said second buffer circuits each configured to operate as a pipelineregister, pipelining function of said remaining first and second buffercircuits being invalidated to cope with changing over a burst lengthvalue for different values of burst lengths.
 4. The semiconductor deviceaccording to claim 3, wherein said memory array includes first to Nthmemory array basic units, where N=2^K, K being a preset positive integernot less than 2 and ^ being a power operator, said first bus including a(N−1) number of said first buffer circuits arranged between (N−1) ofneighboring memory array basic units, respectively, said second busincluding, per data terminal, a M-number of data lines, M being apre-set positive integer not less than 2, said data terminal seriallyinputting/outputting a K-number of bit data corresponding to said burstlength, said second bus including a (N−1) number of said second buffercircuits between (N−1) pairs of neighboring memory array basic units, incase said burst length is M×N, said (N−1) number of said first buffercircuits and said (N−1) number of said second buffer circuits configuredto operate as pipeline registers, in case said burst length isM×(N/(2^L)), where L is a pre-set integer not less than 1 and not morethan K, a 2^(K−1) number of neighboring memory array basic units beingmade a set, said first buffer circuit and said second buffer circuitarranged between said neighboring sets configured to operate as pipelineregisters, said remaining first and second buffer circuits havingpipelining functions thereof invalidated.
 5. The semiconductor deviceaccording to claim 1, further comprising a plurality of third buffercircuits provided in association with a plurality of said memory arraybasic units, each of said third buffer circuits configured to receivesaid address/control signals transferred on said first bus to transmitsaid address/control signals received to associated ones of said memoryarray basic units.
 6. The semiconductor device according to claim 5,wherein said third buffer circuit includes: a three state bufferconfigured to receive address/control signals from said first bus andcontrols transmission/non-transmission to a succeeding side of saidfirst bus in accordance with an enable signal and an address spaceselection logic; and a latch circuit configured to latch an output ofsaid third three-state buffer.
 7. The semiconductor device according toclaim 5, further comprising a sub-controller provided between said thirdbuffer circuit and said memory array basic unit, said sub-controllerconfigured to receive said address/control signals from said thirdbuffer circuit to control said memory array basic unit.
 8. Thesemiconductor device according to claim 1, wherein a first periodcorresponding to a control delay composed of a transfer cycle of anaddress/command to said first bus in a write access and a read accessand a transfer cycle of write data to said second bus in a write accessincludes a plurality of cycles in association with pipeline controlperformed, said first period being longer than a second periodcorresponding to a selection time during which data writing in saidmemory cell selected and/or data reading from said selected memory cellis made in said memory array basic unit of said memory array.
 9. Thesemiconductor device according to claim 8, wherein a third periodcorresponding to an output delay during which, in the read access, dataread from said memory array basic unit is transferred on said second busto get to said second control circuit next to said selection time islonger than said second period corresponding to said selection time. 10.The semiconductor device according to claim 9, wherein said firstperiod, said second period and said third period have an identicalperiod length.
 11. The semiconductor device according to claim 10,wherein said first and second periods or said first to third periods,corresponding to a plurality of commands sequentially inputted insuccession are taken as a unit of pipeline control between saidcommands.
 12. The semiconductor device according to claim 1, whereinsaid memory array basic unit comprises a sub-bank, a plurality of saidsub-banks comprises a bank, a plurality of accesses being made to saidplurality of sub-banks.
 13. The semiconductor device according to claim1, wherein said second bus includes: a dedicated write bus configured totransfer said write data from said second control circuit to saidplurality of said memory array basic units; and a dedicated read busconfigured to transfer said read data from said plurality of memoryarray basic units to said second control circuit, said dedicated writebus including at least one said second buffer circuit, said dedicatedread bus including at least one said second buffer circuit.
 14. Thesemiconductor device according to claim 1, wherein said memory arrayincludes first to Nth memory array basic units, where N=2^K, K being apre-set positive integer not less than 2 and ^ being a power operator, arow of said memory array basic unit being selected by a lower-side firstbit group of an X address, one of said first to Nth memory array basicunits being selected by a second bit group comprised of a K-number ofbits, said second bit group being higher in order than said first bitgroup.
 15. The semiconductor device according to claim 1, wherein saidmemory array includes first to Nth memory array basic units, whereN=2^K, K being a pre-set positive integer not less than 2, saidsemiconductor device including: a row decoder configured to decode alower-side first bit group of an X address to select a row of saidmemory array basic unit; and a column decoder configured to decode asecond bit group composed of K bits to select active areas of said firstto Nth memory array basic units, said second bit group being higher inorder than said first bit group.
 16. The semiconductor device accordingto claim 1, wherein said memory array includes first to Nth memory arraybasic units, where N=2^K, K being a pre-set positive integer not lessthan 2, said device including: a row decoder configured to decode alower-side first bit group of an X address to select a row of saidmemory array basic unit; and a column decoder, said column decoder andsaid row decoder configured to decode a fraction of K bits higher inorder than the lower order bit group and remaining fraction thereof toselect access areas of said first to Nth memory array basic units. 17.The semiconductor device according to claim 1, wherein said first buffercircuit includes: a first three-state buffer configured to receive saidaddress/control signals from said first bus to controltransmission/non-transmission to a succeeding side of said first bus towhich an output of said first three-state buffer is coupled to, inaccordance with an enable control signal supplied and an address spaceselection logic signal; and a latch circuit configured to latch theoutput of said first three-state buffer.
 18. The semiconductor deviceaccording to claim 1, wherein said second buffer circuit includes: afirst three-state buffer configured to receive said write data from saidsecond bus to control transmission/non-transmission to a succeeding sideof said second bus to which an output of said first three-state bufferis coupled to, in accordance with a write enable control signal and anaddress space selection logic; a second three-state buffer configured toreceive said read data from said succeeding side of said second bus towhich the output of said first three-state buffer is coupled to, saidsecond three-state buffer controlling transmission/non-transmission to apreceding side of said second bus in accordance with a read enablecontrol signal and an address space selection logic signal; and a latchcircuit configured to latch the output of said first three-state buffer.